- Mounting Style :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
27 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,704
In-stock
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Fairchild Semiconductor | MOSFET Trans MOS N-Ch 55V 75A | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 75 A | 7 mOhms | Enhancement | UltraFET | ||||||
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1,354
In-stock
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STMicroelectronics | MOSFET N-CH 100V 5.1 mOhm 45A STripFET VII | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 45 A | 7 mOhms | 4.5 V | 72 nC | ||||||
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2,484
In-stock
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Infineon Technologies | MOSFET 1 P-CH -12V HEXFET 7mOhms 91nC | 8 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 12 V | - 16 A | 7 mOhms | 91 nC | Enhancement | ||||||
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541
In-stock
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Fairchild Semiconductor | MOSFET N-Channel PwrTrench | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 15 A | 7 mOhms | Enhancement | PowerTrench | ||||||
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640
In-stock
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Fairchild Semiconductor | MOSFET 75a 55V 0.007Ohm NCh UltraFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 75 A | 7 mOhms | Enhancement | UltraFET | ||||||
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233
In-stock
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Fairchild Semiconductor | MOSFET 75a 55V 0.007Ohm NCh UltraFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 75 A | 7 mOhms | Enhancement | UltraFET | ||||||
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19,100
In-stock
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Infineon Technologies | MOSFET MOSFT 75V 140A 7mOhm 150nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 140 A | 7 mOhms | 150 nC | |||||||||
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726
In-stock
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IR / Infineon | MOSFET Automotive MOSFET 7 mOhm, 56 nC Qg, IPAK | 20 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 56 V | 7 A | 7 mOhms | 56 nC | Enhancement | ||||||
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604
In-stock
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IXYS | MOSFET 100 Amps 40V | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 7 mOhms | Enhancement | |||||||
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149
In-stock
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IR / Infineon | MOSFET AUTO 75V 1 N-CH HEXFET 7mOhms | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 140 A | 7 mOhms | 150 nC | |||||||||
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31
In-stock
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Fairchild Semiconductor | MOSFET 80V N-Channel QFET | 25 V | Through Hole | TO-3PN-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 160 A | 7 mOhms | Enhancement | QFET | ||||||
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54
In-stock
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IR / Infineon | MOSFET AUTO 100V 1 N-CH HEXFET 7mOhms | 20 V | Through Hole | TO-262-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 100 V | 130 A | 7 mOhms | 170 nC | Enhancement | |||||||
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106
In-stock
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IXYS | MOSFET 90 Amps 55V 0.0084 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 90 A | 7 mOhms | 4 V | 42 nC | Enhancement | TrenchT2 | ||||
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100
In-stock
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IXYS | MOSFET 100 Amps 40V | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 7 mOhms | Enhancement | |||||||
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VIEW | Infineon Technologies | MOSFET AUTO 100V 1 N-CH HEXFET 7mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 100 V | 130 A | 7 mOhms | 170 nC | Enhancement | |||||||
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VIEW | IXYS | MOSFET 160 Amps 100V 6.9 Rds | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 160 A | 7 mOhms | Enhancement | ||||||||
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VIEW | IXYS | MOSFET 160 Amps 100V 6.9 Rds | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 160 A | 7 mOhms | Enhancement | ||||||||
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VIEW | IXYS | MOSFET 160 Amps 100V 6.9 Rds | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 160 A | 7 mOhms | Enhancement | ||||||||
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VIEW | IXYS | MOSFET 160 Amps 100V 6.9 Rds | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 160 A | 7 mOhms | Enhancement | ||||||||
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VIEW | IXYS | MOSFET 180 Amps 85V 0.007 Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 85 V | 180 A | 7 mOhms | Enhancement | HyperFET | ||||||
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VIEW | Infineon Technologies | MOSFET AUTO 75V 1 N-CH HEXFET 7mOhms | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 106 A | 7 mOhms | 150 nC | |||||||||
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VIEW | IXYS | MOSFET 180 Amps 85V 0.007 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 85 V | 180 A | 7 mOhms | Enhancement | HyperFET | ||||||
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1,680
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 9mOhms 39nC | 30 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 14 A | 7 mOhms | 4 V | 39 nC | Enhancement | |||||
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180
In-stock
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IR / Infineon | MOSFET 100V 1 N-CH HEXFET 7mOhms 170nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 140 A | 7 mOhms | 170 nC | Enhancement | ||||||
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275
In-stock
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IR / Infineon | MOSFET 75V 1 N-CH HEXFET 7mOhms 150nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 105 A | 7 mOhms | 2 V to 4 V | 150 nC | Enhancement | |||||
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828
In-stock
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Infineon Technologies | MOSFET N-Ch 55V 80A TO220-3 OptiMOS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 80 A | 7 mOhms | Enhancement | OptiMOS | ||||||
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VIEW | IR / Infineon | MOSFET AUTO 100V 1 N-CH HEXFET 7mOhms | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 130 A | 7 mOhms | 4 V | 170 nC |