- Manufacture :
- Package / Case :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,449
In-stock
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IR / Infineon | MOSFET MOSFT 30V 62A 12mOhm 24nC | 12 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 62 A | 13.5 mOhms | 24 nC | ||||||||
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679
In-stock
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Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 13.5mOhms | 16 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 51 A | 13.5 mOhms | 3 V | 24 nC | |||||
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288
In-stock
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IR / Infineon | MOSFET N-CHANNEL 55 / 60 | 16 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 51 A | 13.5 mOhms | |||||||
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307
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 30A IPAK-3 OptiMOS 3 | 20 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | GaN | N-Channel | 30 V | 30 A | 13.5 mOhms | Enhancement | OptiMOS | |||||
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159
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 50A IPAK-3 | 20 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 50 A | 13.5 mOhms | Enhancement | OptiMOS | |||||
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VIEW | IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 13.5mOhms | 16 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 51 A | 13.5 mOhms | 3 V | 24 nC |
