- Manufacture :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | |
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35,648
In-stock
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Fairchild Semiconductor | MOSFET 500V N-Channel PowerTrench MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 18 A | 265 mOhms | Enhancement | ||||
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GET PRICE |
35,648
In-stock
|
onsemi | MOSFET 500V N-CH MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 18 A | 265 mOhms | Enhancement | |||
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84,700
In-stock
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Fairchild Semiconductor | MOSFET 500V N-Channel PowerTrench MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 8 A | 265 mOhms | Enhancement | ||||
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718
In-stock
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Fairchild Semiconductor | MOSFET 500V N-CH MOSFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 19 A | 265 mOhms | Enhancement | ||||
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1,716
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 185mOhms 13.3nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 11 A | 265 mOhms | 13.3 nC | Enhancement | |||
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1,530
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 11A 185mOhm 13.3nC LogLv | 16 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 11 A | 265 mOhms | 13.3 nC |
