- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Qg - Gate Charge :
- Tradename :
21 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,248
In-stock
|
IR / Infineon | MOSFET 1 P-CH -40V HEXFET 15mOhms 73nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 40 V | - 10.5 A | 25 mOhms | - 3 V | 73 nC | Enhancement | ||||
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867
In-stock
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IXYS | MOSFET -90.0 Amps -100V 25 mOhms | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 90 A | 25 mOhms | |||||||
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2,262
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 25mOhms 76nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 59 A | 25 mOhms | 76 nC | Enhancement | |||||
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113,700
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Channel QFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 57 A | 25 mOhms | Enhancement | QFET | |||||
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877
In-stock
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Fairchild Semiconductor | MOSFET 56a 100V N-Ch UltraFET 0.025 Ohm | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 56 A | 25 mOhms | Enhancement | UltraFET | |||||
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747
In-stock
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Fairchild Semiconductor | MOSFET N-Ch LL FET Enhancement Mode | 16 V | Through Hole | TO-220-3 | - 65 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 48 A | 25 mOhms | Enhancement | ||||||
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1,357
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Channel QFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 35 A | 25 mOhms | Enhancement | QFET | |||||
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1,089
In-stock
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Fairchild Semiconductor | MOSFET 20a 60V N-Channel 0.037Ohm | 16 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 35 A | 25 mOhms | Enhancement | UltraFET | |||||
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714
In-stock
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Fairchild Semiconductor | MOSFET 105V 41a 0.033 Ohms/VGS=10V | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 105 V | 41 A | 25 mOhms | Enhancement | PowerTrench | |||||
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688
In-stock
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Fairchild Semiconductor | MOSFET N-Channel FET Enhancement Mode | 20 V | Through Hole | TO-220-3 | - 65 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 48 A | 25 mOhms | Enhancement | ||||||
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340
In-stock
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Fairchild Semiconductor | MOSFET TO-262 | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 56 A | 25 mOhms | Enhancement | UltraFET | |||||
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GET PRICE |
55,900
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Channel QFET | 25 V | Through Hole | TO-3PN-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 70 A | 25 mOhms | Enhancement | QFET | ||||
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140
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 65A 25mOhm 70nC Qg | 30 V | Through Hole | TO-247-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 65 A | 25 mOhms | 70 nC | Enhancement | |||||
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538
In-stock
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IXYS | MOSFET 75 Amps 100V 0.025 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 75 A | 25 mOhms | Enhancement | ||||||
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441
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 26A 22mOhm 73nC | 30 V | Through Hole | TO-220-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 26 A | 25 mOhms | 73 nC | Enhancement | |||||
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8,070
In-stock
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Wolfspeed / Cree | MOSFET SIC MOSFET 1200V RDS ON 25 mOhm | - 10 V, + 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1200 V | 90 A | 25 mOhms | 2.4 V | 406 nC | Enhancement | ||||
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90
In-stock
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IXYS | MOSFET SiC Power MOSFET | - 5 V to + 20 V | Chassis Mount | SOT-227-4 | - 40 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1.2 kV | 68 A | 25 mOhms | 2 V | 161 nC | Enhancement | ||||
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VIEW | Fairchild Semiconductor | MOSFET 56a 100V N-Ch UltraFET .25 Ohm | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 56 A | 25 mOhms | Enhancement | UltraFET | |||||
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VIEW | IXYS | MOSFET 67 Amps 100V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 67 A | 25 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 67 Amps 100V 0.025 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 67 A | 25 mOhms | Enhancement | ||||||
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2,270
In-stock
|
IR / Infineon | MOSFET 30V 1 N-CH HEXFET 25mOhms 9.5nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 8.3 A | 25 mOhms | 9.5 nC | Enhancement |
