- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
14 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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993
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Chan PowerTrench MOSFET | 20 V | SMD/SMT | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 144 A | 5.5 mOhms | 156 nC | PowerTrench | ||||||
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95
In-stock
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IXYS | MOSFET Polar Power MOSFET HiPerFET | 20 V | Screw Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 295 A | 5.5 mOhms | 5 V | 279 nC | Enhancement | Polar, HiPerFET | ||||
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561
In-stock
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Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 5.5mOhms 59nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 119 A | 5.5 mOhms | 2 V to 4 V | 59 nC | Enhancement | |||||
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20,100
In-stock
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Infineon Technologies | MOSFET MOSFT 40V 120A 5.5mOhm 68nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 5.5 mOhms | 68 nC | |||||||||
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475
In-stock
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Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 5.5mOhms 68nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 5.5 mOhms | 68 nC | Enhancement | ||||||
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445
In-stock
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Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 5.5mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 5.5 mOhms | 68 nC | Enhancement | |||||||
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194
In-stock
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Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 5.5mOhms | 20 V | Through Hole | TO-251-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 40 V | 119 A | 5.5 mOhms | 59 nC | Enhancement | |||||||
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94
In-stock
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STMicroelectronics | MOSFET N-Ch 100V 4.1 160A STripFET DeepGATE | 4 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 120 A | 5.5 mOhms | 4 V | 192 nC | ||||||||
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VIEW | IXYS | MOSFET POLAR PWR MOSFET 100V, 300A | Through Hole | PLUS-264-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 300 A | 5.5 mOhms | HyperFET | ||||||||||
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VIEW | IXYS | MOSFET 200 Amps 100V 5.4 Rds | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 200 A | 5.5 mOhms | Enhancement | ||||||||
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VIEW | IXYS | MOSFET 200 Amps 100V 5.4 Rds | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 200 A | 5.5 mOhms | Enhancement | ||||||||
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VIEW | Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 5.5mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 40 V | 119 A | 5.5 mOhms | 59 nC | Enhancement | |||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 30V 50A TO220-3 | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 50 A | 5.5 mOhms | OptiMOS | ||||||||||
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215
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 4.5mOhms 29nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 19 A | 5.5 mOhms | 1.35 V to 2.25 V | 29 nC | Enhancement |