- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
17 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,991
In-stock
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STMicroelectronics | MOSFET N-channel MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 60 A | 14 mOhms | Enhancement | |||||||
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1,621
In-stock
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STMicroelectronics | MOSFET N-Ch 60 Volt 55 Amp | 16 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 55 A | 14 mOhms | Enhancement | |||||||
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1,270
In-stock
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Fairchild Semiconductor | MOSFET N-Ch Power MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 70 A | 14 mOhms | Enhancement | |||||||
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918
In-stock
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Fairchild Semiconductor | MOSFET 75a 100V N-Ch UltraFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 75 A | 14 mOhms | Enhancement | UltraFET | ||||||
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535
In-stock
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Fairchild Semiconductor | MOSFET 75a 80V N-Ch UltraFET 0.014 Ohm | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 75 A | 14 mOhms | Enhancement | UltraFET | ||||||
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2,304
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 14mOhms 17nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 14 A | 14 mOhms | 17 nC | Enhancement | ||||||
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694
In-stock
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Infineon Technologies | MOSFET AUTO 100V 1 N-CH HEXFET 14mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 100 V | 73 A | 14 mOhms | 90 nC | Enhancement | |||||||
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377
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 64A 14mOhm 54nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 64 A | 14 mOhms | 54 nC | |||||||||
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622
In-stock
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STMicroelectronics | MOSFET N-Ch 60 Volt 60 Amp | 15 V | Through Hole | TO-220-3 | - 65 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 60 A | 14 mOhms | Enhancement | |||||||
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GET PRICE |
17,300
In-stock
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IXYS | MOSFET 80 Amps 100V 13.0 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 80 A | 14 mOhms | Enhancement | ||||||
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2
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 14mOhms 54nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 64 A | 14 mOhms | 2 V to 4 V | 54 nC | Enhancement | |||||
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7
In-stock
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IXYS | MOSFET 170 Amps 200V 0.014 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 170 A | 14 mOhms | 5 V | 185 nC | Enhancement | Polar, HiPerFET | ||||
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563
In-stock
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Texas instruments | MOSFET 60V N-Channel NexFET Pwr MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 200 A | 14 mOhms | 3 V | 14 nC | Enhancement | NexFET | ||||
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167
In-stock
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Fairchild Semiconductor | MOSFET 100V 61a 0.016 Ohm | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 61 A | 14 mOhms | Enhancement | |||||||
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VIEW | Infineon Technologies | MOSFET AUTO 100V 1 N-CH HEXFET 14mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 100 V | 73 A | 14 mOhms | 90 nC | Enhancement | |||||||
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VIEW | IXYS | MOSFET 80 Amps 100V 13.0 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 105 V | 80 A | 14 mOhms | 5 V | 60 nC | Enhancement | TrenchMV | ||||
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209
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 12.5mOhms 24nC | 12 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 61 A | 14 mOhms | 0.6 V to 2 V | 24 nC | Enhancement |