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Package / Case :
Technology :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Qg - Gate Charge Channel Mode
IPS12CN10L G
1+
$2.760
10+
$2.130
100+
$1.930
250+
$1.730
RFQ
385
In-stock
Infineon Technologies MOSFET N-Ch 100V 69A IPAK-3 20 V Through Hole TO-251-3 - 55 C + 175 C Tube 1 Channel GaN N-Channel 100 V 69 A 11.8 mOhms   Enhancement
IRLR8721PBF
1+
$1.160
10+
$0.587
100+
$0.494
500+
$0.467
RFQ
12
In-stock
IR / Infineon MOSFET 30V 1 N-CH HEXFET 8.4mOhms 8.5nC 20 V SMD/SMT TO-252-3     Tube 1 Channel Si N-Channel 30 V 65 A 11.8 mOhms 8.5 nC  
IRLU8721PBF
1+
$1.270
10+
$0.562
100+
$0.430
1000+
$0.407
RFQ
18
In-stock
IR / Infineon MOSFET MOSFT 30V 65A 8.5nC 8.4mOhm Qg log lvl 20 V Through Hole TO-251-3     Tube 1 Channel Si N-Channel 30 V 65 A 11.8 mOhms 8.5 nC  
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