- Manufacture :
- Mounting Style :
- Package / Case :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | |
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385
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Infineon Technologies | MOSFET N-Ch 100V 69A IPAK-3 | 20 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | GaN | N-Channel | 100 V | 69 A | 11.8 mOhms | Enhancement | ||||
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12
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 8.4mOhms 8.5nC | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 65 A | 11.8 mOhms | 8.5 nC | ||||||
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18
In-stock
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IR / Infineon | MOSFET MOSFT 30V 65A 8.5nC 8.4mOhm Qg log lvl | 20 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 65 A | 11.8 mOhms | 8.5 nC |