- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Qg - Gate Charge :
- Tradename :
16 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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436
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Ch SupreMOS FRFET MOSFET | 30 V | Through Hole | TO-3PN-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 34.9 A | 80 mOhms | 3.7 V | 86 nC | SupreMOS FRFET | ||||||
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205
In-stock
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STMicroelectronics | MOSFET N-Ch 500 Volt 53 Amp | 30 V | SMD/SMT | ISOTOP-4 | - 65 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 53 A | 80 mOhms | Enhancement | ||||||
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543
In-stock
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IXYS | MOSFET N-CH 200V 16A MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 16 A | 80 mOhms | 208 nC | ||||||
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804
In-stock
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STMicroelectronics | MOSFET N-Ch 550V 0.06 Ohm 33A MDmesh M5 FET | 25 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 550 V | 20.8 A | 80 mOhms | 5 V | 72 nC | |||||||
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973
In-stock
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STMicroelectronics | MOSFET N-Ch 550V 0.006 Ohm 33A MDmesh M5 FET | 25 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 550 V | 20.8 A | 80 mOhms | 5 V | 72 nC | |||||||
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1,663
In-stock
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Infineon Technologies | MOSFET MOSFT 150V 17A 95mOhm 13nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 17 A | 80 mOhms | 4.9 V | 13 nC | |||||
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1,934
In-stock
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STMicroelectronics | MOSFET N-Ch 60 Volt 16 Amp | 16 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 16 A | 80 mOhms | Enhancement | ||||||
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648
In-stock
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Fairchild Semiconductor | MOSFET 150V 35a .42 Ohms/VGS=1V | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 35 A | 80 mOhms | Enhancement | PowerTrench | |||||
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55
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 300V/50A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 300 V | 50 A | 80 mOhms | 65 nC | HyperFET | |||||||
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30
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 300V/50A | 30 V | SMD/SMT | TO-268-3 | Tube | 1 Channel | Si | N-Channel | 300 V | 50 A | 80 mOhms | 65 nC | HyperFET | |||||||
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341
In-stock
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IXYS | MOSFET 300V 40A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 40 A | 80 mOhms | Enhancement | HyperFET | |||||
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27
In-stock
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IXYS | MOSFET 500V 55A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 55 A | 80 mOhms | Enhancement | HyperFET | |||||
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1,200
In-stock
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STMicroelectronics | MOSFET 1200V silicon carbide MOSFET | - 10 V, + 25 V | Through Hole | HiP247-3 | - 55 C | + 200 C | Tube | 1 Channel | SiC | N-Channel | 1.2 kV | 45 A | 80 mOhms | 2.6 V | 105 nC | |||||
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VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 35 A | 80 mOhms | 3 V | 115 nC | Enhancement | ||||
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VIEW | IXYS | MOSFET 70 Amps 600V | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 70 A | 80 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 70 Amps 600V | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 70 A | 80 mOhms | Enhancement | HyperFET |
