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Package / Case :
Technology :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
SCT20N120
1+
$13.210
10+
$12.150
25+
$11.640
100+
$10.260
RFQ
404
In-stock
STMicroelectronics MOSFET 1200V silicon carbide MOSFET - 10 V, + 25 V Through Hole HiP247-3 - 55 C + 200 C Tube 1 Channel SiC N-Channel 1.2 kV 20 A 215 mOhms 2 V 45 nC Enhancement
IXTT30N50L2
1+
$11.650
10+
$10.720
25+
$10.270
100+
$9.050
VIEW
RFQ
IXYS MOSFET LINEAR L2 SERIES MOSFET 500V 30A   Through Hole TO-268-3     Tube 1 Channel Si N-Channel 500 V 30 A 215 mOhms      
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