- Manufacture :
- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Qg - Gate Charge :
20 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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402
In-stock
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IXYS | MOSFET 90 Amps 250V | 20 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 90 A | 33 mOhms | 4.5 V | 640 nC | Enhancement | LinearL2 | ||||
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GET PRICE |
7,650
In-stock
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Infineon Technologies | MOSFET MOSFT 250V 60A 33mOhm 99nC Qg | 30 V | Through Hole | TO-220-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 60 A | 33 mOhms | 99 nC | Enhancement | |||||
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542
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 83.2A TO247-3 CoolMOS C6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 83.2 A | 33 mOhms | 2.5 V | 330 nC | Enhancement | CoolMOS | ||||
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206
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 83.2A TO247-3 CoolMOS C6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 83.2 A | 33 mOhms | 2.5 V | 330 nC | Enhancement | CoolMOS | ||||
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926
In-stock
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STMicroelectronics | MOSFET N-Ch 100 Volt 40 Amp | 17 V | Through Hole | TO-220-3 | - 65 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 40 A | 33 mOhms | Enhancement | |||||||
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30
In-stock
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IXYS | MOSFET 90 Amps 250V | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 90 A | 33 mOhms | ||||||||
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24,300
In-stock
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Infineon Technologies | MOSFET MOSFT 250V 57A 33mOhm 99nC Qg | 30 V | Through Hole | TO-247-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 57 A | 33 mOhms | 99 nC | Enhancement | ||||||
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18
In-stock
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IXYS | MOSFET 90 Amps 250V | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 90 A | 33 mOhms | 4.5 V | 640 nC | Enhancement | LinearL2 | ||||
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183
In-stock
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IXYS | MOSFET 62 Amps 150V 0.04 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 62 A | 33 mOhms | 5.5 V | 70 nC | Enhancement | PolarHT | ||||
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47
In-stock
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IXYS | MOSFET 102 Amps 300V 0.033 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 102 A | 33 mOhms | 5 V | 224 nC | Enhancement | PolarHT | ||||
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20
In-stock
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IXYS | MOSFET 102 Amps 300V 0.033 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 86 A | 33 mOhms | 5 V | 224 nC | Enhancement | PolarHV, HiPerFET | ||||
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4
In-stock
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IXYS | MOSFET 850V X-Class HiPerFE Power MOSFET | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 850 V | 110 A | 33 mOhms | 3.5 V | 425 nC | Enhancement | |||||
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10
In-stock
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IXYS | MOSFET 90 Amps 300V 0.033 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 90 A | 33 mOhms | 4 V | 360 nC | Enhancement | HyperFET | ||||
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8,000
In-stock
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IXYS | MOSFET 102 Amps 300V 0.033 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 102 A | 33 mOhms | 5 V | 224 nC | Enhancement | PolarHT, HiPerFET | ||||
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VIEW | IXYS | MOSFET 300V 90A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 90 A | 33 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 60 Amps 200V 0.033 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 60 A | 33 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 72 Amps 200 V 0.033 W Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 72 A | 33 mOhms | Enhancement | |||||||
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VIEW | IXYS | MOSFET 72 Amps 200V 0.033 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 72 A | 33 mOhms | Enhancement | |||||||
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VIEW | IXYS | MOSFET 60 Amps 150V 0.033 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 150 V | 60 A | 33 mOhms | Enhancement | |||||||
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VIEW | IXYS | MOSFET 90 Amps 300V 0.033 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 90 A | 33 mOhms | Enhancement | HyperFET |