- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Qg - Gate Charge :
25 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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812
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 800V 400mohm | 20 V, 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 14 A | 400 mOhms | 2.5 V | 43 nC | Enhancement | SuperFET II | |||
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533
In-stock
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STMicroelectronics | MOSFET N-Ch 800 Volt 11 Amp Power MDmesh | 30 V | Through Hole | TO-247-3 | - 65 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 11 A | 400 mOhms | Enhancement | ||||||
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1,616
In-stock
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IXYS | MOSFET 600V 18A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 18 A | 400 mOhms | Enhancement | HyperFET | |||||
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3,297
In-stock
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STMicroelectronics | MOSFET N-Ch 200 Volt 10 Amp | 20 V | Through Hole | TO-220-3 | - 65 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 9 A | 400 mOhms | Enhancement | ||||||
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753
In-stock
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Fairchild Semiconductor | MOSFET 600V N-CHAN MOSFET | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 10 A | 400 mOhms | SuperFET II | |||||||
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GET PRICE |
6,230
In-stock
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onsemi | MOSFET SuperFET2, 400mohm, 800V, Zener | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 11 A | 400 mOhms | 4.5 V | 56 nC | SuperFET II | ||||
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507
In-stock
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IXYS | MOSFET 500V 16A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 16 A | 400 mOhms | Enhancement | HyperFET | |||||
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562
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Channel QFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 6.3 A | 400 mOhms | Enhancement | QFET | |||||
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127
In-stock
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IXYS | MOSFET DIODE Id24 BVdass800 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 24 A | 400 mOhms | Enhancement | HyperFET | |||||
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813
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 10.3A TO220FP-3 | 20 V | Through Hole | TO-220FP-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 10.3 A | 400 mOhms | 3 V | 32 nC | CoolMOS | ||||
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192
In-stock
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IXYS | MOSFET 500V 16A | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 16 A | 400 mOhms | Enhancement | HyperFET | |||||
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100
In-stock
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IXYS | MOSFET 16.0 Amps 500 V 0.4 Ohm Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 16 A | 400 mOhms | 5.5 V | 43 nC | Enhancement | PolarHV | |||
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267
In-stock
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IXYS | MOSFET 500V 16A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 16 A | 400 mOhms | Enhancement | HyperFET | |||||
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149
In-stock
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IXYS | MOSFET 16.0 Amps 500 V 0.4 Ohm Rds | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 16 A | 400 mOhms | Enhancement | ||||||
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30
In-stock
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IXYS | MOSFET 24 Amps 1000V | 20 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 24 A | 400 mOhms | 5.5 V | 267 nC | Enhancement | ||||
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20
In-stock
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IXYS | MOSFET 24 Amps 800V 0.4 Rds | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 24 A | 400 mOhms | 5 V | 105 nC | Enhancement | PolarHV, HiPerFET | |||
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387
In-stock
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Texas instruments | MOSFET Single P-Ch Enh-Mode MOSFET | - 15 V, 2 V | SMD/SMT | TSSOP-8 | - 40 C | + 125 C | Tube | 1 Channel | Si | P-Channel | - 15 V | - 1.27 A | 400 mOhms | Enhancement | ||||||
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1,976
In-stock
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STMicroelectronics | MOSFET N-Ch 300 Volt 9 Amp Zener SuperMESH3 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 9 A | 400 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 16.0 Amps 500 V 0.4 Ohm Rds | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 16 A | 400 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 24 Amps 800V 0.4 Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 24 A | 400 mOhms | 100 nC | Enhancement | HyperFET | ||||
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VIEW | IXYS | MOSFET 30 Amps 1000V 0.35 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 30 A | 400 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 30 Amps 1000V 0.35 Rds | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 30 A | 400 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 13 Amps 500V 0.4 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 13 A | 400 mOhms | Enhancement | HyperFET | |||||
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8,500
In-stock
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Toshiba | MOSFET MOSFET DTMOS-II N-Ch 600V 12A | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 12 A | 400 mOhms | Enhancement | ||||||
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VIEW | Toshiba | MOSFET N-Ch MOS 12A 600V 144W 720pF 0.4 | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 12 A | 400 mOhms |
