- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
- Tradename :
13 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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5,391
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Channel QFET Logic Level | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 17.2 A | 63 mOhms | Enhancement | ||||||
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5,000
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 53A TO247-3 CoolMOS C6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 53 A | 63 mOhms | 2.5 V | 170 nC | Enhancement | CoolMOS | |||
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334
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 53.5A TO247-3 CoolMOS C6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 53.5 A | 63 mOhms | 2.5 V | 170 nC | Enhancement | CoolMOS | |||
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656
In-stock
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STMicroelectronics | MOSFET N-Ch 650V 0.056 Ohm 42 A MDmesh M5 | Through Hole | TO-220FP-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 26.5 A | 63 mOhms | ||||||||||
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136
In-stock
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STMicroelectronics | MOSFET N-Ch 650V 0.056 Ohm 42 A MDmesh M5 | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 26.5 A | 63 mOhms | ||||||||||
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329
In-stock
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Infineon Technologies | MOSFET HIGH POWER PRICE/PERFORM | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 53.5 A | 63 mOhms | 3.5 V | 100 nC | Enhancement | CoolMOS | |||
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5,000
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 53A TO247-3 CoolMOS C6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 53 A | 63 mOhms | 2.5 V | 170 nC | Enhancement | CoolMOS | |||
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175
In-stock
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Infineon Technologies | MOSFET HIGH POWER PRICE/PERFORM | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 53.5 A | 63 mOhms | 3.5 V | 100 nC | Enhancement | CoolMOS | |||
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15
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 20A 44mOhm 49.3nC LogLvl | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 20 A | 63 mOhms | 49.3 nC | ||||||||
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959
In-stock
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STMicroelectronics | MOSFET N-Ch 300V 0.063Ohm 42A pwr MOSFET | 20 V | Through Hole | TO-220-3 | + 175 C | Tube | 1 Channel | Si | N-Channel | 300 V | 42 A | 63 mOhms | 3 V | 90 nC | ||||||
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574
In-stock
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STMicroelectronics | MOSFET N-Ch 300 V 0.063 Ohm 42 A STripFET(TM) | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 300 V | 42 A | 63 mOhms | 3 V | 90 nC | Enhancement | STripFET | |||
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20
In-stock
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IXYS | MOSFET 45 Amps 800V | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 44 A | 63 mOhms | 3.9 V | 360 nC | Enhancement | CoolMOS | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 700V 53.5A TO247-3 CoolMOS C6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 53.5 A | 63 mOhms | 2.5 V | 170 nC | Enhancement | CoolMOS |
