- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Qg - Gate Charge :
- Tradename :
11 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
977
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1050 V | 6 A | 1.3 Ohms | 4 V | 21.5 nC | Enhancement | ||||
|
|
590
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1050 V | 6 A | 1.3 Ohms | 3 V | 21.5 nC | Enhancement | ||||
|
|
799
In-stock
|
Fairchild Semiconductor | MOSFET SuperFET2 800V 1300mOhm Y-formed lead | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.3 Ohms | 4.5 V | 16.2 nC | |||||
|
|
430
In-stock
|
Fairchild Semiconductor | MOSFET 900V N-Channel QFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 8.6 A | 1.3 Ohms | Enhancement | QFET | |||||
|
|
714
In-stock
|
Fairchild Semiconductor | MOSFET SuperFET2, 1300mohm, 800V, Zener | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.3 Ohms | 4.5 V | 16.2 nC | SuperFET II | ||||
|
|
47
In-stock
|
IXYS | MOSFET 12 Amps 1000V 1.3 Ohms Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 12 A | 1.3 Ohms | Enhancement | ||||||
|
|
357
In-stock
|
Diodes Incorporated | MOSFET N-Ch Enh Mode FET 650V 10V VGS 9.0A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 9 A | 1.3 Ohms | 3 V | 39 nC | Enhancement | ||||
|
|
709
In-stock
|
STMicroelectronics | MOSFET N-Ch, 900V-1.1ohms Zener SuperMESH 8A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 8 A | 1.3 Ohms | Enhancement | ||||||
|
|
421
In-stock
|
STMicroelectronics | MOSFET N-Ch 900 Volt 8.0 A Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 8 A | 1.3 Ohms | Enhancement | ||||||
|
|
2,250
In-stock
|
Diodes Incorporated | MOSFET N-CH MOSFET 650V 9A | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 9 A | 1.3 Ohms | ||||||||||
|
|
VIEW | STMicroelectronics | MOSFET N-Ch 650V 1.1 Ohm 5.4A SuperMESH3 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 5.4 A | 1.3 Ohms | 35 nC | Enhancement |