Build a global manufacturer and supplier trusted trading platform.
Vgs - Gate-Source Voltage :
Minimum Operating Temperature :
Maximum Operating Temperature :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Qg - Gate Charge :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IRFI4229PBF
1+
$3.010
10+
$2.560
100+
$2.220
250+
$2.110
RFQ
1,152
In-stock
IR / Infineon MOSFET MOSFT 250V 19A 46mOhm 73nC 30 V Through Hole TO-220-3 - 40 C + 150 C Tube 1 Channel Si N-Channel 250 V 19 A 46 mOhms   73 nC Enhancement  
IRFP4229PBF
1+
$3.000
10+
$3.000
100+
$2.000
250+
$2.000
RFQ
5,290
In-stock
IR / Infineon MOSFET MOSFT 250V 44A 46mOhm 72nC Qg 30 V Through Hole TO-247-3 - 40 C + 175 C Tube 1 Channel Si N-Channel 250 V 44 A 46 mOhms   72 nC Enhancement  
IRFB4229PBF
GET PRICE
RFQ
31,000
In-stock
Infineon Technologies MOSFET MOSFT 250V 46A 46mOhm 72nC Qg 30 V Through Hole TO-220-3 - 40 C + 175 C Tube 1 Channel Si N-Channel 250 V 46 A 46 mOhms   72 nC Enhancement  
AUIRLU024Z
1+
$1.110
10+
$0.941
100+
$0.723
500+
$0.639
RFQ
632
In-stock
IR / Infineon MOSFET Automotive FET 55V 7A 58mOhm 16 V Through Hole TO-251-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 55 V 16 A 46 mOhms 1 V 9.9 nC Enhancement  
IXTH60N25
30+
$8.270
120+
$7.180
270+
$6.860
510+
$6.250
VIEW
RFQ
IXYS MOSFET 60 Amps 250V 0.046 Rds 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 250 V 60 A 46 mOhms     Enhancement  
IXFE73N30Q
10+
$20.640
30+
$19.710
100+
$17.620
250+
$16.810
VIEW
RFQ
IXYS MOSFET 66 Amps 300V 0.046 Rds 20 V SMD/SMT ISOPLUS-227-4 - 55 C + 150 C Tube 1 Channel Si N-Channel 300 V 66 A 46 mOhms     Enhancement HyperFET
Page 1 / 1