- Package / Case :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
- Tradename :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,240
In-stock
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Fairchild Semiconductor | MOSFET 650V 44A N-Channel SuperFET MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 44 A | 67 mOhms | 2.5 V | 78 nC | Enhancement | SuperFET III | |||
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573
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 57.7A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 57.7 A | 67 mOhms | 2.5 V | 138 nC | Enhancement | CoolMOS | |||
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585
In-stock
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STMicroelectronics | MOSFET N-Ch 650 V 0.067 Ohm 35 A MDmesh(TM) | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 35 A | 67 mOhms | 4 V | 82 nC | Enhancement | MDmesh | |||
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385
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 57.7A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 57.7 A | 67 mOhms | 2.5 V | 138 nC | Enhancement | CoolMOS | |||
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303
In-stock
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Fairchild Semiconductor | MOSFET SuperFET3 650V 67 mOhm | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 44 A | 67 mOhms | 2.5 V | 78 nC | Enhancement | SuperFET III | |||
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90
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 57.7A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 57.7 A | 67 mOhms | 2.5 V | 138 nC | Enhancement | CoolMOS | |||
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482
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 57.7A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 57.7 A | 67 mOhms | 2.5 V | 138 nC | Enhancement | CoolMOS |
