- Mounting Style :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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86
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IXYS | MOSFET 500V to 1200V Polar Power MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 200 mA | 60 Ohms | 4 V | 4.7 nC | Enhancement | |||
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VIEW | IXYS | MOSFET 36 Amps 200V 60 Rds | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 200 V | 36 A | 60 Ohms | |||||||||
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VIEW | IXYS | MOSFET 60 Amps 300V 60 Rds | Through Hole | TO-3P-3 | Tube | 1 Channel | Si | N-Channel | 300 V | 60 A | 60 Ohms | |||||||||
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VIEW | IXYS | MOSFET 36 Amps 200V 60 Rds | Through Hole | TO-3P-3 | Tube | 1 Channel | Si | N-Channel | 200 V | 36 A | 60 Ohms | |||||||||
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VIEW | IXYS | MOSFET 36 Amps 200V 60 Rds | SMD/SMT | TO-263-3 | Tube | 1 Channel | Si | N-Channel | 200 V | 36 A | 60 Ohms |
