- Mounting Style :
- Minimum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
30 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,468
In-stock
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Fairchild Semiconductor | MOSFET 200V P-Channel QFET | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 3.7 A | 1.4 Ohms | Enhancement | ||||||
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4,814
In-stock
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Fairchild Semiconductor | MOSFET 500V N-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 5 A | 1.4 Ohms | Enhancement | ||||||
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5,037
In-stock
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Fairchild Semiconductor | MOSFET 500V,4.0A NCH MOSFET | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 4 A | 1.4 Ohms | ||||||||||
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941
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1050 V | 4 A | 1.4 Ohms | 3 V | 17 nC | Enhancement | ||||
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1,595
In-stock
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Fairchild Semiconductor | MOSFET 500V N-Channel | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 5 A | 1.4 Ohms | Enhancement | UniFET | |||||
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1,021
In-stock
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Fairchild Semiconductor | MOSFET 900V N-Chan Advance Q-FET C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 8 A | 1.4 Ohms | Enhancement | ||||||
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1,049
In-stock
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Fairchild Semiconductor | MOSFET 900V N-Channel Adv Q-FET C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 8 A | 1.4 Ohms | Enhancement | QFET | |||||
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2,602
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 3.2A TO220FP-3 CoolMOS C3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 3.2 A | 1.4 Ohms | Enhancement | CoolMOS | |||||
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1,181
In-stock
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Fairchild Semiconductor | MOSFET 200V P-Channel QFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 3.4 A | 1.4 Ohms | Enhancement | QFET | |||||
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793
In-stock
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Fairchild Semiconductor | MOSFET 650V N-Channel Adv Q-FET C-Series | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7 A | 1.4 Ohms | Enhancement | QFET | |||||
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GET PRICE |
30,700
In-stock
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Fairchild Semiconductor | MOSFET 900V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 11 A | 1.4 Ohms | Enhancement | QFET | ||||
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778
In-stock
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Fairchild Semiconductor | MOSFET 650V N-Ch Advance Q-FET C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7 A | 1.4 Ohms | Enhancement | ||||||
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505
In-stock
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Infineon Technologies | MOSFET CONSUMER | 20 V | Through Hole | TO-220FP-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 10.3 A | 1.4 Ohms | 2.5 V | 20.5 nC | Enhancement | CoolMOS | |||
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112
In-stock
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IXYS | MOSFET 7 Amps 800V 1.44 Rds | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 7 A | 1.4 Ohms | Enhancement | HyperFET | |||||
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55
In-stock
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IXYS | MOSFET 10 Amps 1000V | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 10 A | 1.4 Ohms | 6.5 V | 56 nC | Enhancement | Polar, HiPerFET | |||
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658
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 3.2A IPAK-3 CoolMOS C3 | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 3.2 A | 1.4 Ohms | Enhancement | CoolMOS | |||||
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GET PRICE |
81,000
In-stock
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Fairchild Semiconductor | MOSFET 900V N-Channel QFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 9 A | 1.4 Ohms | Enhancement | QFET | ||||
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9
In-stock
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IXYS | MOSFET 10 Amps 1000V 1.4 Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 10 A | 1.4 Ohms | - 3.5 V | 130 nC | Enhancement | ||||
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76
In-stock
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IXYS | MOSFET 5 Amps 500V 1.3 Ohms Rds | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 4.8 A | 1.4 Ohms | 5.5 V | 12.6 nC | Enhancement | PolarHV | |||
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30
In-stock
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IXYS | MOSFET 4.8 Amps 500V 1.4 Ohms Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 4.8 A | 1.4 Ohms | Enhancement | ||||||
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77
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 3.2A IPAK-3 CoolMOS S5 | 20 V | SMD/SMT | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 3.2 A | 1.4 Ohms | Enhancement | CoolMOS | |||||
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500
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 3.2A TO220-3 | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 3.2 A | 1.4 Ohms | CoolMOS | |||||||||
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VIEW | IXYS | MOSFET 4.8 Amps 500V 1.4 Ohms Rds | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 4.8 A | 1.4 Ohms | 5.5 V | 12.6 nC | Enhancement | PolarHV | |||
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VIEW | IXYS | MOSFET 3.2 Amps 500V 1.4 Ohms Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 3.2 A | 1.4 Ohms | Enhancement | HyperFET | |||||
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VIEW | Infineon Technologies | MOSFET N-Ch 600V 3.2A TO220-3 CoolMOS S5 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 3.2 A | 1.4 Ohms | Enhancement | CoolMOS | |||||
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VIEW | IXYS | MOSFET 12 Amps 1200V 1.3 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 12 A | 1.4 Ohms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 6 Amps 900V 1.4 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 6 A | 1.4 Ohms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 6 Amps 800 V 1.4 W Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6 A | 1.4 Ohms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 7 Amps 800V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 7 A | 1.4 Ohms | Enhancement | HyperFET | |||||
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VIEW | Infineon Technologies | MOSFET N-Ch 650V 3.2A TO220-3 CoolMOS C3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 3.2 A | 1.4 Ohms | Enhancement | CoolMOS |