- Manufacture :
- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Channel Mode :
5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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5,092
In-stock
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Infineon Technologies | MOSFET P-Ch -30V 80A TO220-3 OptiMOS-P2 | - 16 V, + 5 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 30 V | - 80 A | 3.7 mOhms | - 2 V | 160 nC | Enhancement | OptiMOS | |||
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261
In-stock
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IXYS | MOSFET -96 Amps -85V 0.013 Rds | 15 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 85 V | - 96 A | 13 mOhms | - 2 V | 180 nC | Enhancement | ||||
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627
In-stock
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Infineon Technologies | MOSFET P-Ch -30V 80A TO220-3 OptiMOS-P2 | - 16 V, + 5 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 30 V | - 80 A | 3.7 mOhms | - 2 V | 160 nC | Enhancement | ||||
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929
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -80A TO220-3 OptiMOS-P2 | + 5 V, - 16 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 30 V | - 80 A | 6.9 mOhms | - 2 V | 63 nC | Enhancement | OptiMOS | |||
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86
In-stock
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IXYS | MOSFET D2 Depletion Mode Power MOSFETs | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 16 A | 300 mOhms | - 2 V | 199 nC | Depletion |