- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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VIEW | IR / Infineon | MOSFET 55V, 61A, 14 mOhm Auto Lgc Lvl MOSFET | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 61 A | 12 mOhms | 1 V to 3 V | 61 nC | Enhancement | |||
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566
In-stock
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IR / Infineon | MOSFET 55V 1 N-CH HEXFET 8mOhms 40nC | 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 86 A | 12 mOhms | 1 V to 3 V | 40 nC | Enhancement | |||
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421
In-stock
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IR / Infineon | MOSFET 55V 1 N-CH HEXFET 14mOhms 61nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 61 A | 17 mOhms | 1 V to 3 V | 61 nC | Enhancement | |||
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670
In-stock
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IR / Infineon | MOSFET 55V 1 N-CH HEXFET 13.5mOhms 24nC | 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 51 A | 22.5 mOhms | 1 V to 3 V | 24 nC | Enhancement | |||
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16
In-stock
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IR / Infineon | MOSFET 55V 1 N-CH HEXFET 37mOhms 13.3nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 25 A | 43 mOhms | 1 V to 3 V | 13.3 nC | Enhancement | |||
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6
In-stock
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IR / Infineon | MOSFET 40V 1 N-CH HEXFET 4mOhms 93.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 160 A | 4 mOhms | 1 V to 3 V | 93.3 nC | Enhancement |
