- Manufacture :
- Package / Case :
- Minimum Operating Temperature :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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364
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 41mohm | 20 V | Through Hole | TO-247-3 | - 50 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 77 A | 41 mOhms | 2.5 V to 3.5 V | 285 nC | SuperFET II | ||||
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1,148
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Channel MOSFET | 20 V | Through Hole | TO-220FP-3 | - 50 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7.4 A | 600 mOhms | 2.5 V to 3.5 V | 20 nC | SuperFET II | ||||
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38
In-stock
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Toshiba | MOSFET MOSFET NChannel 0.22ohm DTMOS | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 13.7 A | 220 mOhms | 2.5 V to 3.5 V | 35 nC | Enhancement |
