- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- 1.6 A (1)
- 10 A (3)
- 10.3 A (1)
- 10.6 A (4)
- 100 A (1)
- 11 A (5)
- 11.6 A (1)
- 110 A (3)
- 119 A (1)
- 12 A (2)
- 12.5 A (2)
- 120 A (2)
- 13 A (2)
- 13.8 A (12)
- 14 A (1)
- 14.1 A (4)
- 15 A (5)
- 16 A (4)
- 17 A (2)
- 17.3 A (2)
- 18.1 A (1)
- 19.3 A (1)
- 2 A (1)
- 2.4 A (1)
- 2.6 A (3)
- 20.2 A (11)
- 200 A (2)
- 21 A (2)
- 23 A (6)
- 23.8 A (4)
- 24.8 A (4)
- 25 A (10)
- 26.7 A (1)
- 27.6 A (2)
- 29 A (2)
- 3.1 A (2)
- 3.2 A (4)
- 30 A (5)
- 31 A (6)
- 343 A (1)
- 36 A (2)
- 37.9 A (6)
- 38 A (6)
- 39 A (2)
- 4 A (1)
- 4.3 A (2)
- 4.4 A (3)
- 4.5 A (2)
- 4.8 A (2)
- 44 A (2)
- 49.2 A (1)
- 5.1 A (2)
- 5.2 A (2)
- 5.6 A (1)
- 5.7 A (2)
- 5.8 A (2)
- 500 A (1)
- 52 A (1)
- 53 A (2)
- 53.5 A (2)
- 57.7 A (4)
- 6 A (2)
- 6.6 A (1)
- 6.8 A (1)
- 6.9 A (2)
- 60 A (3)
- 63 A (1)
- 64 A (1)
- 65 A (1)
- 66 A (1)
- 7 A (1)
- 7.3 A (4)
- 7.6 A (2)
- 7.8 A (2)
- 77.5 A (2)
- 8 A (2)
- 8.1 A (4)
- 8.5 A (2)
- 80 A (1)
- 83.2 A (2)
- 9 A (4)
- 9.1 A (1)
- 9.2 A (2)
- 9.3 A (1)
- Rds On - Drain-Source Resistance :
-
- 0.003 Ohms (1)
- 0.0045 Ohms (2)
- 0.041 Ohms (1)
- 1 Ohms (3)
- 1.02 Ohms (1)
- 1.15 Ohms (1)
- 1.26 Ohms (6)
- 1.4 mOhms (1)
- 1.4 Ohms (1)
- 1.5 Ohms (2)
- 1.6 mOhms (1)
- 1.8 Ohms (1)
- 100 mOhms (2)
- 105 mOhms (3)
- 11 mOhms (1)
- 110 mOhms (10)
- 125 mOhms (2)
- 130 mOhms (2)
- 140 mOhms (4)
- 150 mOhms (2)
- 16 mOhms (1)
- 165 mOhms (2)
- 170 mOhms (17)
- 18 mOhms (2)
- 180 mOhms (4)
- 2.2 mOhms (1)
- 2.25 Ohms (1)
- 2.5 mOhms (1)
- 2.6 mOhms (1)
- 2.7 Ohms (2)
- 21 mOhms (1)
- 220 mOhms (6)
- 24 mOhms (1)
- 250 mOhms (13)
- 270 mOhms (5)
- 28 mOhms (1)
- 280 mOhms (3)
- 290 mOhms (2)
- 3.4 Ohms (1)
- 300 mOhms (2)
- 32 mOhms (1)
- 320 mOhms (2)
- 33 mOhms (2)
- 340 mOhms (6)
- 35.4 mOhms (1)
- 350 mOhms (4)
- 37 mOhms (2)
- 4.3 Ohms (1)
- 40 mOhms (4)
- 400 mOhms (1)
- 410 mOhms (2)
- 430 mOhms (1)
- 440 mOhms (1)
- 460 mOhms (1)
- 470 mOhms (4)
- 480 mOhms (1)
- 490 mOhms (2)
- 500 mOhms (1)
- 530 mOhms (1)
- 540 mOhms (4)
- 55 mOhms (1)
- 550 mOhms (1)
- 590 mOhms (2)
- 620 mOhms (2)
- 63 mOhms (4)
- 640 mOhms (1)
- 650 mOhms (2)
- 660 mOhms (1)
- 67 mOhms (6)
- 68 mOhms (2)
- 680 mOhms (2)
- 70 mOhms (1)
- 720 mOhms (2)
- 740 mOhms (1)
- 800 mOhms (1)
- 850 mOhms (3)
- 855 mOhms (2)
- 860 mOhms (4)
- 89 mOhms (6)
- 890 mOhms (2)
- 90 mOhms (12)
- 94 mOhms (2)
- 940 mOhms (2)
- Qg - Gate Charge :
-
- 10.5 nC (6)
- 100 nC (1)
- 103 nC (1)
- 108 nC (1)
- 11 nC (3)
- 116 nC (2)
- 118 nC (1)
- 119 nC (6)
- 12 nC (1)
- 12.4 nC (2)
- 120 nC (1)
- 123 nC (1)
- 127 nC (6)
- 128 nC (1)
- 13 nC (4)
- 135 nC (1)
- 136 nC (1)
- 138 nC (4)
- 145 nC (2)
- 15 nC (3)
- 15.3 nC (3)
- 150 nC (1)
- 16 nC (2)
- 16.4 nC (2)
- 160 nC (1)
- 165 nC (1)
- 17.2 nC (3)
- 170 nC (4)
- 190 nC (4)
- 20 nC (1)
- 20.5 nC (2)
- 22 nC (5)
- 23 nC (4)
- 23.4 nC (4)
- 24.8 nC (4)
- 25 nC (2)
- 260 nC (2)
- 27 nC (1)
- 270 nC (2)
- 28 nC (5)
- 29 nC (5)
- 290 nC (2)
- 32 nC (5)
- 32.6 nC (1)
- 330 nC (2)
- 34 nC (1)
- 35 nC (2)
- 36 nC (2)
- 4.3 nC (2)
- 4.7 nC (1)
- 40 nC (3)
- 42 nC (2)
- 43 nC (14)
- 45 nC (6)
- 47.2 nC (4)
- 52 nC (2)
- 545 nC (1)
- 57 nC (3)
- 58 nC (2)
- 6.7 nC (1)
- 6.8 nC (2)
- 60 nC (1)
- 63 nC (7)
- 64 nC (2)
- 7.4 nC (1)
- 70 nC (6)
- 73 nC (4)
- 75 nC (7)
- 78 nC (5)
- 8.2 nC (3)
- 80 nC (6)
- 9.4 nC (5)
- 94 nC (3)
- 96 nC (4)
218 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
479
In-stock
|
Infineon Technologies | MOSFET | 16 V | Through Hole | TO-251-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 700 V | 12.5 A | 300 mOhms | 2.5 V | 16.4 nC | Enhancement | CoolMOS | |||
|
|
455
In-stock
|
Infineon Technologies | MOSFET | 16 V | Through Hole | TO-251-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 700 V | 8.5 A | 490 mOhms | 2.5 V | 10.5 nC | Enhancement | CoolMOS | |||
|
|
1,371
In-stock
|
Infineon Technologies | MOSFET N-Ch 900V 36A TO247-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 36 A | 100 mOhms | 2.5 V | 270 nC | Enhancement | CoolMOS | |||
|
|
1,277
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 77.5A TO247-3 CoolMOS C6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 77.5 A | 37 mOhms | 2.5 V | 290 nC | Enhancement | CoolMOS | |||
|
|
1,479
In-stock
|
Fairchild Semiconductor | MOSFET SuperFET2 800V 850 mOhm Zener embedded, IPAK PKG | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6 A | 850 mOhms | 2.5 V | 22 nC | Enhancement | SuperFET II | |||
|
|
3,279
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 11A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 11 A | 270 mOhms | 2.5 V | 29 nC | Enhancement | CoolMOS | |||
|
|
1,039
In-stock
|
Fairchild Semiconductor | MOSFET 800V 8A NChn MOSFET SuperFET II, FRFET | 20 V, 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 8 A | 850 mOhms | 2.5 V | 22 nC | Enhancement | SuperFET II | |||
|
|
3,130
In-stock
|
Infineon Technologies | MOSFET MOSFT 40V 343A 1.7mOhm 108nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 343 A | 1.4 mOhms | 2.5 V | 108 nC | |||||
|
|
1,535
In-stock
|
Fairchild Semiconductor | MOSFET 800V 10A NChn MOSFET SuperFET II | 20 V, 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 10 A | 650 mOhms | 2.5 V | 27 nC | Enhancement | SuperFET II | |||
|
|
812
In-stock
|
Fairchild Semiconductor | MOSFET SuperFET2 800V 400mohm | 20 V, 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 14 A | 400 mOhms | 2.5 V | 43 nC | Enhancement | SuperFET II | |||
|
|
1,240
In-stock
|
Fairchild Semiconductor | MOSFET 650V 44A N-Channel SuperFET MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 44 A | 67 mOhms | 2.5 V | 78 nC | Enhancement | SuperFET III | |||
|
|
799
In-stock
|
Fairchild Semiconductor | MOSFET 800V SuperFET2 N-Chnl Mosfet | 20 V, 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 17 A | 290 mOhms | 2.5 V | 58 nC | Enhancement | SuperFET II | |||
|
|
1,097
In-stock
|
Fairchild Semiconductor | MOSFET 600V 29A N-Chnl SuperFET Easy-Drive | 20 V, 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 29 A | 125 mOhms | 2.5 V | 75 nC | Enhancement | SuperFET II | |||
|
|
1,499
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 38A TO220FP-3 CoolMOS C6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 37.9 A | 90 mOhms | 2.5 V | 119 nC | Enhancement | CoolMOS | |||
|
|
702
In-stock
|
Fairchild Semiconductor | MOSFET 800V 23A N-Channel SuperFET II MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 23 A | 220 mOhms | 2.5 V | 78 nC | Enhancement | SuperFET II | |||
|
|
564
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 31A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 31 A | 90 mOhms | 2.5 V | 80 nC | Enhancement | CoolMOS | |||
|
|
GET PRICE |
46,800
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 38A TO247-3 CoolMOS C6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 37.9 A | 90 mOhms | 2.5 V | 119 nC | Enhancement | CoolMOS | ||
|
|
600
In-stock
|
Fairchild Semiconductor | MOSFET SuperFET2 600V slow version | 20 V, 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 52 A | 70 mOhms | 2.5 V | 128 nC | Enhancement | SuperFET II | |||
|
|
5,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 53A TO247-3 CoolMOS C6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 53 A | 63 mOhms | 2.5 V | 170 nC | Enhancement | CoolMOS | |||
|
|
113,700
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 20.2A TO220FP-3 CoolMOS C6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 20.2 A | 170 mOhms | 2.5 V | 63 nC | Enhancement | CoolMOS | |||
|
|
542
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 83.2A TO247-3 CoolMOS C6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 83.2 A | 33 mOhms | 2.5 V | 330 nC | Enhancement | CoolMOS | |||
|
|
3,370
In-stock
|
Infineon Technologies | MOSFET N-Ch 500V 18.5A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 24.8 A | 170 mOhms | 2.5 V | 47.2 nC | Enhancement | CoolMOS | |||
|
|
334
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 53.5A TO247-3 CoolMOS C6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 53.5 A | 63 mOhms | 2.5 V | 170 nC | Enhancement | CoolMOS | |||
|
|
1,020
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 30A TO220FP-3 CoolMOS C6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 110 mOhms | 2.5 V | 96 nC | Enhancement | CoolMOS | |||
|
|
666
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 30A TO247-3 CoolMOS C6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 110 mOhms | 2.5 V | 96 nC | Enhancement | CoolMOS | |||
|
|
341
In-stock
|
IXYS | MOSFET Linear Extended FBSOA Power MOSFET | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 110 A | 18 mOhms | 2.5 V | 260 nC | Enhancement | |||||
|
|
305
In-stock
|
IXYS | MOSFET L2 Linear Power MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 110 A | 18 mOhms | 2.5 V | 260 nC | Enhancement | ||||
|
|
500
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 25A TO220FP-3 CoolMOS CP | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 25 A | 110 mOhms | 2.5 V | 70 nC | Enhancement | CoolMOS | |||
|
|
864
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 23.8A TO220-3 CoolMOS C6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23.8 A | 140 mOhms | 2.5 V | 75 nC | Enhancement | CoolMOS | |||
|
|
671
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 60A TO247-3 CoolMOS CP | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 60 A | 40 mOhms | 2.5 V | 190 nC | Enhancement | CoolMOS |
