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8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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900
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Channel MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 29.7 A | 58 mOhms | 5 V | 210 nC | |||||
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1,787
In-stock
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Infineon Technologies | MOSFET MOSFT 75V 142A 7.5mOhm 210nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 142 A | 7.5 mOhms | 210 nC | ||||||||
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850
In-stock
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IR / Infineon | MOSFET 60V Single N-Channel HEXFET Power | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 173 A | 3.3 mOhms | 3.7 V | 210 nC | Enhancement | StrongIRFET | |||||
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174
In-stock
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IR / Infineon | MOSFET N-CHANNEL 75 / 80 | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 120 A | 3.7 mOhms | 2 V | 210 nC | Enhancement | ||||
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GET PRICE |
50,000
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 120A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 120 A | 2 mOhms | 2.2 V | 210 nC | Enhancement | |||
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1,176
In-stock
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Infineon Technologies | MOSFET Auto 40V N-Ch FET 1.3mOhm 195A | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 240 A | 1 MOhms | 2.2 V to 3.9 V | 210 nC | Enhancement | CoolIRFet | |||
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164
In-stock
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IR / Infineon | MOSFET MOSFET N-CH 40V 240A D2PAK-7 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 40 V | 362 A | 700 uOhms | 3 V | 210 nC | Enhancement | StrongIRFET | |||
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52
In-stock
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IR / Infineon | MOSFET Auto 40V N-Ch FET 1.3mOhm 195A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 195 A | 1.6 mOhms | 2.2 V to 3.9 V | 210 nC | Enhancement | CoolIRFet |
