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17 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,456
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Chan MOSFET UniFET-II | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 12 A | 530 mOhms | 5 V | 26 nC | UniFET | |||||||
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2,588
In-stock
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IR / Infineon | MOSFET 60V 1 N-CH HEXFET 9.4mOhms 26nC | 20 V | SMD/SMT | SO-8 | Tube | 1 Channel | Si | N-Channel | 60 V | 12 A | 9.4 mOhms | 26 nC | |||||||||
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2,638
In-stock
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Infineon Technologies | MOSFET AUTO 150V 1 N-CH HEXFET 42mOhms | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 150 V | 33 A | 42 mOhms | 26 nC | ||||||||||
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2,772
In-stock
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Infineon Technologies | MOSFET 200V 1 N-CH HEXFET 170mOhms 26nC | 30 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 2.5 A | 170 mOhms | 26 nC | Enhancement | ||||||
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1,241
In-stock
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Infineon Technologies | MOSFET MOSFT 150V 34A 41mOhm 26nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 150 V | 35 A | 32 mOhms | 26 nC | |||||||||
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858
In-stock
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Infineon Technologies | MOSFET 150V 1 N-CH HEXFET 42mOhms 26nC | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 150 V | 33 A | 34 mOhms | 26 nC | |||||||||
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813
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Channel MOSFET | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 4.7 A | 600 mOhms | 3.5 V | 26 nC | SuperFET II | ||||||
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GET PRICE |
48,100
In-stock
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Infineon Technologies | MOSFET Audio MOSFT 150V 34A 41mOhm 26nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 150 V | 35 A | 32 mOhms | 26 nC | ||||||||
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2,710
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 12A TO220FP-3 CoolMOS CP | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 12 A | 250 mOhms | 26 nC | Enhancement | CoolMOS | |||||
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105
In-stock
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IXYS | MOSFET 4 Amps 1000V | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 4 A | 3.3 Ohms | 6 V | 26 nC | Enhancement | Polar, HiPerFET | ||||
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2,000
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 14 A | 340 mOhms | 3 V | 26 nC | Enhancement | |||||
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VIEW | IXYS | MOSFET 4 Amps 1000V | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 4 A | 3.3 Ohms | 3 V to 6 V | 26 nC | Enhancement | HyperFET | ||||
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VIEW | STMicroelectronics | MOSFET N-Ch 620V 1.28V Ohm 4.2A SuperMESH 3 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 620 V | 4.2 A | 1.6 Ohms | 26 nC | |||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 620V 1.28 Ohm SuperMESH3 4.3A | Through Hole | TO-220-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 620 V | 4.2 A | 1.6 Ohms | 26 nC | |||||||||
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2,386
In-stock
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onsemi | MOSFET NCH 70A 100V Power M | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 70 A | 12.8 mOhms | 2 V | 26 nC | Enhancement | |||||
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256
In-stock
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IR / Infineon | MOSFET 150V 1 N-CH HEXFET 42mOhms 26nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 33 A | 42 mOhms | 3 V to 5 V | 26 nC | Enhancement | |||||
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21,400
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 50A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 50 A | 6.5 mOhms | 26 nC | OptiMOS |