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38 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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39,300
In-stock
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STMicroelectronics | MOSFET N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOS... | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 18 A | 168 mOhms | 2 V | 29 nC | Enhancement | |||
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3,279
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 11A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 11 A | 270 mOhms | 2.5 V | 29 nC | Enhancement | CoolMOS | |||
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1,907
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 34A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 34 A | 28 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | |||
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14,280
In-stock
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STMicroelectronics | MOSFET N-Ch 600V 0.168Ohm 18A MDmesh M2 | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 18 A | 190 mOhms | 4 V | 29 nC | ||||||
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2,258
In-stock
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IR / Infineon | MOSFET 40V 1 N-CH HEXFET 13mOhms 29nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 40 V | 11 A | 15 mOhms | 0.8 V to 2 V | 29 nC | Enhancement | ||||
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25,820
In-stock
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STMicroelectronics | MOSFET N-Ch 800 V 0.37 Ohm 12 A Zener-protect | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 12 A | 370 mOhms | 4 V | 29 nC | Enhancement | ||||
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1,713
In-stock
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Infineon Technologies | MOSFET N-Ch 250V 25A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 25 A | 51 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | |||
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1,286
In-stock
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STMicroelectronics | MOSFET N-Ch 600V 0.168 Ohm 18A Mdmesh M2 | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 18 A | 168 mOhms | 3 V | 29 nC | ||||||
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1,200
In-stock
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STMicroelectronics | MOSFET N-Ch 800 V 0.37 Ohm 12 A Zener-protect | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 12 A | 370 mOhms | 4 V | 29 nC | Enhancement | ||||
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1,498
In-stock
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STMicroelectronics | MOSFET N-Ch 600 V 0.168 Ohm 18 A MDmesh M2 | 25 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 18 A | 168 mOhms | 3 V | 29 nC | Enhancement | MDmesh | |||
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1,196
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 12 A | 450 mOhms | 3 V | 29 nC | Enhancement | ||||
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3,000
In-stock
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IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 14.5mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 59 A | 14.5 mOhms | 29 nC | Enhancement | ||||||
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880
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 16 A | 185 mOhms | 2 V | 29 nC | Enhancement | ||||
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855
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 16 A | 230 mOhms | 3 V | 29 nC | Enhancement | ||||
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438
In-stock
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Fairchild Semiconductor | MOSFET P-CH/250V/6A/0.62OHM, Y-formed lead | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 250 V | - 6 A | 480 mOhms | - 5 V | 29 nC | Enhancement | QFET | |||
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587
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 51A 13.9mOhm 29nC Qg | 20 V | SMD/SMT | TO-263-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 51 A | 13.9 mOhms | 29 nC | ||||||||
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1,323
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 51A 13.9mOhm 29nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 51 A | 13.9 mOhms | 29 nC | ||||||||
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330
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 11A TO220FP-3 CoolMOS CP | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 11 A | 270 mOhms | 2.5 V | 29 nC | Enhancement | CoolMOS | |||
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283
In-stock
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IXYS | MOSFET 500V 12A | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 12 A | 500 mOhms | 5.5 V | 29 nC | Enhancement | Polar, HiPerFET | |||
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720
In-stock
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Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 13.9mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 51 A | 13.9 mOhms | 29 nC | Enhancement | ||||||
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500
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 11A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 11 A | 270 mOhms | 2.5 V | 29 nC | Enhancement | CoolMOS | |||
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161
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 75A TO220FP-3 OptiMOS 3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 75 A | 3.7 mOhms | 29 nC | Enhancement | OptiMOS | ||||
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333
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 34A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 34 A | 28 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | |||
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415
In-stock
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Infineon Technologies | MOSFET N-Ch 250V 25A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 25 A | 51 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | |||
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1,046
In-stock
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onsemi | MOSFET NFET TO220FP 600V 4. | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4.8 A | 1.8 Ohms | 3 V | 29 nC | Enhancement | ||||
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2
In-stock
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STMicroelectronics | MOSFET N-Ch 600V 0.175 Ohm typ. 18A MDmesh DM2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 18 A | 200 mOhms | 4 V | 29 nC | |||||
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20
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 51A 13.9mOhm 29nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 51 A | 13.9 mOhms | 29 nC | ||||||||
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52
In-stock
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IXYS | MOSFET 12.0 Amps 500 V 0.5 Ohm Rds | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 12 A | 500 mOhms | 5.5 V | 29 nC | Enhancement | Polar | |||
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61
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 12 A | 450 mOhms | 3 V | 29 nC | Enhancement | ||||
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68
In-stock
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IXYS | MOSFET 12 Amps 500V 0.5 Ohm Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 12 A | 500 mOhms | 5.5 V | 29 nC | Enhancement | Polar |