- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Applied Filters :
23 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,000
In-stock
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STMicroelectronics | MOSFET N-CH 950V 4.2Ohm typ 2A Zener-protected | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 950 V | 2 A | 4.2 Ohms | 4 V | 10 nC | |||||||
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1,643
In-stock
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Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 65mOhms | 16 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 17 A | 65 mOhms | 10 nC | Enhancement | ||||||
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1,216
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1050 V | 1.5 A | 8 Ohms | 4 V | 10 nC | Enhancement | ||||
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1,000
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 5 A | 900 mOhms | 3 V | 10 nC | MDmesh | ||||
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1,832
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 65mOhms 10nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 17 A | 110 mOhms | 2 V | 10 nC | Enhancement | ||||
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1,029
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 18A 60mOhm 10nC LogLvlAB | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 18 A | 105 mOhms | 10 nC | ||||||||
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746
In-stock
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Fairchild Semiconductor | MOSFET CFET 3A / 500V | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 3 A | 2.5 Ohms | 2 V | 10 nC | Enhancement | ||||
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769
In-stock
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Fairchild Semiconductor | MOSFET 600V, N-Channel MOSFET, UniFET-II | 25 V | Through Hole | TO-220FP-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4.5 A | 1.65 Ohms | 3 V to 5 V | 10 nC | UniFET | |||||
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1,707
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 10mOhms 10nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 65 A | 12.5 mOhms | 10 nC | Enhancement | |||||
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880
In-stock
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STMicroelectronics | MOSFET N-CH 600V 0.72Ohm 5.5A MDMesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 5.5 A | 780 mOhms | 3 V | 10 nC | |||||
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353
In-stock
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STMicroelectronics | MOSFET N-CH 600V 0.72Ohm 55A MDMesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 5.5 A | 780 mOhms | 3 V | 10 nC | |||||
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280
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 60mOhms 10nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 18 A | 105 mOhms | 10 nC | Enhancement | |||||
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838
In-stock
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STMicroelectronics | MOSFET N-CH 950V 4.2Ohm typ 2A Zener-protected | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 950 V | 2 A | 4.2 Ohms | 4 V | 10 nC | |||||||
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799
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 5 A | 790 mOhms | 2 V | 10 nC | Enhancement | MDmesh | |||
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8,540
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 17A 65mOhm 10nC Log Lvl | 16 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 17 A | 110 mOhms | 10 nC | ||||||||
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800
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Channel MOSFET, UniFET-II | 25 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 4.5 A | 1.65 Ohms | 5 V | 10 nC | UniFET | ||||||
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VIEW | Infineon Technologies | MOSFET AUTO 30V 1 N-CH HEXFET 45mOhms | 16 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 30 V | 23 A | 65 mOhms | 10 nC | Enhancement | ||||||
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2,103
In-stock
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IR / Infineon | MOSFET 150V 1 N-CH HEXFET 280mOhms 10nC | 30 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 150 V | 1.9 A | 280 mOhms | 10 nC | Enhancement | |||||
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2,506
In-stock
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IR / Infineon | MOSFET 25V 1 N-CH HEXFET 5.7mOhms 10nC | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 25 V | 81 A | 8.5 mOhms | 10 nC | ||||||||
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430
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 45mOhms 6.2nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 22 A | 65 mOhms | 10 nC | Enhancement | |||||
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426
In-stock
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IR / Infineon | MOSFET MOSFT 81A 5.7mOhm 25V 10nC Qg log lvl | 20 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 25 V | 81 A | 8.5 mOhms | 10 nC | ||||||||
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173
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 8.9mOhms 10nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 58 A | 11.9 mOhms | 1.35 V to 2.35 V | 10 nC | Enhancement | ||||
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240
In-stock
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IR / Infineon | MOSFET MOSFT 30V 22A 45mOhm 10nC Log Lvl | 16 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 22 A | 65 mOhms | 10 nC |
