- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
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20 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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645
In-stock
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Infineon Technologies | MOSFET 200V 1 N-CH HEXFET 78mOhms 25nC | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 200 V | 24 A | 64 mOhms | 25 nC | ||||||||
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284
In-stock
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Infineon Technologies | MOSFET 200V 1 N-CH HEXFET 235mOhms 25nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 14 A | 235 mOhms | 25 nC | Enhancement | |||||
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422
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 43A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 43 A | 15.5 mOhms | 2 V | 25 nC | Enhancement | OptiMOS | |||
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348
In-stock
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Infineon Technologies | MOSFET 200V 1 N-CH HEXFET 78mOhms 25nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 24 A | 77.5 mOhms | 3 V to 5 V | 25 nC | Enhancement | ||||
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GET PRICE |
30,000
In-stock
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Infineon Technologies | MOSFET Audio MOSFT 200V 25A 72.5mOhm 25nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 25 A | 72.5 mOhms | 25 nC | Enhancement | ||||
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644
In-stock
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Infineon Technologies | MOSFET 20V 1 N-CH HEXFET 60mOhms 25nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 20 V | - 5.3 A | 100 mOhms | 25 nC | Enhancement | |||||
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723
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 43A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 43 A | 15.5 mOhms | 2 V | 25 nC | Enhancement | OptiMOS | |||
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639
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 13A 235mOhm 25nC | 30 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 13 A | 235 mOhms | 25 nC | Enhancement | |||||
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240
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 10A TO247-3 CoolMOS CP | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 10 A | 320 mOhms | 2.5 V | 25 nC | Enhancement | CoolMOS | |||
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60
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 25A 72.5mOhm 25nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 25 A | 72.5 mOhms | 25 nC | Enhancement | |||||
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40
In-stock
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IXYS | MOSFET Polar3 HiPerFETs MOSFET w/Fast Diode | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 14 A | 540 mOhms | 3 V to 5 V | 25 nC | Enhancement | HyperFET | |||
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200
In-stock
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Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 9.7 A | 350 mOhms | 3 V | 25 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET AUTO 200V 1 N-CH HEXFET 78mOhms | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 200 V | 24 A | 78 mOhms | 25 nC | ||||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 500V 10A TO247-3 CoolMOS CP | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 10 A | 320 mOhms | 2.5 V | 25 nC | Enhancement | CoolMOS | |||
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674
In-stock
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STMicroelectronics | MOSFET N-Ch 100V 0.0145 Ohm typ 30A STripFET VII | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 30 A | 18 mOhms | 4.5 V | 25 nC | |||||
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VIEW | STMicroelectronics | MOSFET N-channel 100 V 0 013 Ohm typ 45 A | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 45 A | 18 mOhms | 4.5 V | 25 nC | |||||
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VIEW | Toshiba | MOSFET N-Ch 900V 5A 45W PD Rdson 2.2 Ohm | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 5 A | 2.2 Ohms | 25 nC | ||||||
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857
In-stock
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IR / Infineon | MOSFET 150V 1 N-CH HEXFET 43mOhms 25nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 150 V | 5.1 A | 43 mOhms | 3 V to 5 V | 25 nC | Enhancement | ||||
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300
In-stock
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IR / Infineon | MOSFET MOSFT 200V 24A 78mOhm 25nC | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 24 A | 77.5 mOhms | 25 nC | Enhancement | |||||
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5
In-stock
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IR / Infineon | MOSFET MOSFT 200V 24A 78mOhm 25nC | 20 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 24 A | 78 mOhms | 25 nC | Enhancement |
