- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Tradename :
- Applied Filters :
19 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
1,327
In-stock
|
STMicroelectronics | MOSFET N-Ch 950V 1 Ohm 9A Zener MDmesh K5 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 9 A | 1.25 Ohms | 13 nC | ||||||
|
|
1,867
In-stock
|
Fairchild Semiconductor | MOSFET Low Power Two-Input Logic Gate TinyLogic | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 675 V | 4.5 A | 900 mOhms | 3.5 V | 13 nC | SuperFET II | ||||
|
|
1,663
In-stock
|
Infineon Technologies | MOSFET MOSFT 150V 17A 95mOhm 13nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 17 A | 80 mOhms | 4.9 V | 13 nC | |||||
|
|
689
In-stock
|
STMicroelectronics | MOSFET N-Ch 950V 1 Ohm 9A Zener MDmesh K5 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 9 A | 1.25 Ohms | 13 nC | ||||||
|
|
1,661
In-stock
|
STMicroelectronics | MOSFET N-Ch, 620V-2.2ohms 2.7A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 620 V | 2.7 A | 2.5 Ohms | 13 nC | Enhancement | |||||
|
|
1,051
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 4.5 A | 1.6 Ohms | 4 V | 13 nC | Enhancement | ||||
|
|
1,391
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 4.5 A | 1.6 Ohms | 4 V | 13 nC | Enhancement | ||||
|
|
583
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-Chan MOSFET UniFET-II | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 6.5 A | 1.05 Ohms | 5 V | 13 nC | UniFET | ||||||
|
|
662
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 4.4A TO220FP-3 CoolMOS C6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4.4 A | 860 mOhms | 2.5 V | 13 nC | Enhancement | CoolMOS | |||
|
|
1,485
In-stock
|
Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4.4 A | 860 mOhms | 3 V | 13 nC | Enhancement | CoolMOS | |||
|
|
466
In-stock
|
Infineon Technologies | MOSFET N-Ch 550V 7.1A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 7.1 A | 520 mOhms | 13 nC | CoolMOS | |||||
|
|
176
In-stock
|
Infineon Technologies | MOSFET N-Ch 500V 7A TO220FP-3 CoolMOS CP | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 7.1 A | 520 mOhms | 13 nC | Enhancement | CoolMOS | ||||
|
|
3,870
In-stock
|
Wolfspeed / Cree | MOSFET SIC MOSFET 1700V RDS ON 1 Ohm | SMD/SMT | TO-263-7 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1700 V | 5.3 A | 1 Ohm | 3.1 V | 13 nC | Enhancement | |||||
|
|
VIEW | Infineon Technologies | MOSFET N-Ch 650V 4.4A TO220FP-3 CoolMOS C6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4.4 A | 860 mOhms | 2.5 V | 13 nC | Enhancement | CoolMOS | |||
|
|
600
In-stock
|
STMicroelectronics | MOSFET N-Ch 1050V 8 Ohm 1.4 A SuperMESH3(TM) | 30 V | Through Hole | TO-3PF-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1050 V | 1.4 A | 8 Ohms | 3 V | 13 nC | Enhancement | SuperMesh | |||
|
|
VIEW | STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 4.5 A | 1.6 Ohms | 4 V | 13 nC | Enhancement | ||||
|
|
924
In-stock
|
STMicroelectronics | MOSFET N-Ch 1050V 8Ohm 1.4A SuperMESH3 MOS | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 1050 V | 1.4 A | 11 Ohms | 4.5 V | 13 nC | Enhancement | |||||||
|
|
73
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 4.4A IPAK-3 | +/- 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4.4 A | 860 mOhms | 2.5 V | 13 nC | Enhancement | ||||
|
|
398
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 4.3A IPAK-3 | 20 V | Through Hole | TO-251-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4.3 A | 1 Ohms | 2.5 V | 13 nC | Enhancement | CoolMOS |
