- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Applied Filters :
24 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,820
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 20 A | 150 mOhms | 2 V | 35 nC | Enhancement | |||||
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GET PRICE |
13,960
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220FP-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 20 A | 150 mOhms | 2 V | 35 nC | Enhancement | ||||
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906
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 12A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 12 A | 220 mOhms | 2.5 V | 35 nC | Enhancement | CoolMOS | |||
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536
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 12A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 12 A | 220 mOhms | 2.5 V | 35 nC | Enhancement | CoolMOS | |||
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414
In-stock
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STMicroelectronics | MOSFET N-channel 600 V 0.27 ohm 13A MDmesh | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13 A | 260 mOhms | 35 nC | ||||||
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278
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 58A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 58 A | 11 mOhms | 2 V | 35 nC | Enhancement | OptiMOS | |||
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573
In-stock
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Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 18 A | 111 mOhms | 3 V | 35 nC | Enhancement | CoolMOS | |||
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455
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 58A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 58 A | 11 mOhms | 2 V | 35 nC | Enhancement | OptiMOS | |||
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214
In-stock
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Infineon Technologies | MOSFET HIGH POWER_NEW | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 18 A | 111 mOhms | 3 V | 35 nC | Enhancement | CoolMOS | |||
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633
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 70A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 70 A | 8.4 mOhms | 2 V | 35 nC | Enhancement | OptiMOS | |||
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55
In-stock
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IXYS | MOSFET 650V/9A Power MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 20 A | 210 mOhms | 3 V | 35 nC | Enhancement | ||||
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150
In-stock
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IXYS | MOSFET 650V/9A Power MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 20 A | 210 mOhms | 3 V | 35 nC | Enhancement | ||||
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50
In-stock
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IXYS | MOSFET 650V/9A Power MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 9 A | 210 mOhms | 3 V | 35 nC | Enhancement | ||||
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50
In-stock
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IXYS | MOSFET 650V/9A Power MOSFET | 30 V | Through Hole | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 20 A | 210 mOhms | 3 V | 35 nC | Enhancement | ||||
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2,798
In-stock
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Wolfspeed / Cree | MOSFET 1000V 65 mOhm G3 SiC MOSFET TO-247-4 | - 4 V, + 15 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1000 V | 35 A | 65 mOhms | 1.8 V | 35 nC | Enhancement | ||||
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38
In-stock
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Toshiba | MOSFET MOSFET NChannel 0.22ohm DTMOS | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 13.7 A | 220 mOhms | 2.5 V to 3.5 V | 35 nC | Enhancement | ||||
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438
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-247-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 20 A | 150 mOhms | 2 V | 35 nC | Enhancement | |||||
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200
In-stock
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Wolfspeed / Cree | MOSFET 1000V 65mOhm G3 SiC MOSFET TO-263-7 | - 4 V, + 15 V | Through Hole | TO-263-7 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1 kV | 35 A | 65 mOhms | 1.8 V | 35 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 80V 70A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 70 A | 8.4 mOhms | 2 V | 35 nC | Enhancement | OptiMOS | |||
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VIEW | Infineon Technologies | MOSFET HIGH POWER_NEW | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 18 A | 111 mOhms | 3 V | 35 nC | Enhancement | CoolMOS | |||
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485
In-stock
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Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 18 A | 111 mOhms | 3 V | 35 nC | Enhancement | CoolMOS | |||
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585
In-stock
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STMicroelectronics | MOSFET N-Ch 600 V 0.27 Ohm 13 A MDmesh(TM) | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13 A | 260 mOhms | 3 V | 35 nC | Enhancement | MDmesh | |||
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VIEW | STMicroelectronics | MOSFET N-channel 600 V 0.27ohm 13A MDmesh | 25 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 13 A | 260 mOhms | 3 V | 35 nC | |||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 650V 1.1 Ohm 5.4A SuperMESH3 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 5.4 A | 1.3 Ohms | 35 nC | Enhancement |
