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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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272
In-stock
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onsemi | MOSFET GAN 600V 9A 290MO | 18 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | GaN | N-Channel | 600 V | 9 A | 350 mOhms | 1.6 V | 6.2 nC | Enhancement | ||||
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99
In-stock
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onsemi | MOSFET GAN 600V 17A 150MO | 18 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | GaN | N-Channel | 600 V | 17 A | 340 mOhms | 1.6 V | 6.2 nC | Enhancement | ||||
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1,316
In-stock
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Fairchild Semiconductor | MOSFET 500V N-Chan MOSFET UniFET-II | 25 V | Through Hole | TO-220FP-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 3 A | 2.1 Ohms | 5 V | 6.2 nC | UniFET | ||||||
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1,206
In-stock
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IR / Infineon | MOSFET 30V SINGLE N-CH 11.9mOhms 6.2nC | 20 V | SMD/SMT | SO-8 | Tube | 1 Channel | Si | N-Channel | 30 V | 11 A | 17.5 mOhms | 6.2 nC |
