- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Applied Filters :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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6,791
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 140mOhms 9.5nC | 16 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 55 V | 2 A | 140 mOhms | 2 V | 9.5 nC | Enhancement | ||||
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790
In-stock
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STMicroelectronics | MOSFET N-CH 800V 2.8Ohm typ 2.5A Zener-protected | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2.5 A | 2.8 Ohms | 4 V | 9.5 nC | |||||
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9,000
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 1.8A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 1.8 A | 3 Ohms | 9.5 nC | CoolMOS | |||||
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1,343
In-stock
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Wolfspeed / Cree | MOSFET G3 SiC MOSFET 900V, 280 mOhm | - 8 V, + 18 V | SMD/SMT | TO-263-7 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 900 V | 11 A | 385 mOhms | 1.8 V | 9.5 nC | Enhancement | ||||
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197
In-stock
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Wolfspeed / Cree | MOSFET G3 SiC MOSFET 900V, 280mOhm | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 900 V | 11.5 A | 280 mOhms | 2.1 V | 9.5 nC | Enhancement | |||||
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915
In-stock
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STMicroelectronics | MOSFET N-CH 800V 2.8Ohm typ 2.5A Zener-protected | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2.5 A | 2.8 Ohms | 4 V | 9.5 nC | |||||
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2,270
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 25mOhms 9.5nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 8.3 A | 25 mOhms | 9.5 nC | Enhancement | |||||
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669
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 10mOhms 9.5nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 13 A | 13 mOhms | 9.5 nC | Enhancement |
