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Package / Case :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
BUZ30A H
1+
$1.910
10+
$1.630
100+
$1.300
500+
$1.140
RFQ
594
In-stock
Infineon Technologies MOSFET N-Ch 200V 21A TO220FP-3 20 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 200 V 21 A 100 mOhms 2.1 V - Enhancement SIPMOS
IXTY02N50D
1+
$1.420
10+
$1.210
100+
$0.925
500+
$0.818
RFQ
238
In-stock
IXYS MOSFET 0.2 Amps 500V 30 Rds 20 V SMD/SMT TO-252-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 500 V 200 mA 30 Ohms - - Depletion  
BUZ30AHXKSA1
1+
$1.910
10+
$1.630
100+
$1.300
500+
$1.140
RFQ
495
In-stock
Infineon Technologies MOSFET N-Ch 200V 21A TO220FP-3 20 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 200 V 21 A 100 mOhms 2.1 V - Enhancement OptiMOS
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