- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
14 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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2,033
In-stock
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IXYS | MOSFET D2 Depletion Mode Power MOSFETs | 20 V | Through Hole | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 16 A | 73 mOhms | 208 nC | Depletion | ||||
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1,178
In-stock
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IXYS | MOSFET 8mAmps 1000V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 800 mA | 21 Ohms | 14.6 nC | Depletion | ||||
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135
In-stock
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IXYS | MOSFET D2 Depletion Mode Power MOSFETs | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 16 A | 64 mOhms | 225 nC | Depletion | ||||
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180
In-stock
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IXYS | MOSFET 0.1 Amps 1000V 110 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 100 mA | 80 Ohms | Depletion | |||||
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89
In-stock
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IXYS | MOSFET N-CH MOSFETS (D2) 500V 6A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 6 A | 550 mOhms | - 4.5 V | 96 nC | Depletion | |||
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238
In-stock
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IXYS | MOSFET 0.2 Amps 500V 30 Rds | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 200 mA | 30 Ohms | - | - | Depletion | |||
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41
In-stock
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IXYS | MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 10 A | 1.5 Ohms | 200 nC | Depletion | ||||
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30
In-stock
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IXYS | MOSFET D2 Depletion Mode Power MOSFETs | Through Hole | TO-268-3 | Tube | 1 Channel | Si | N-Channel | 1000 V | 10 A | 1.5 Ohms | Depletion | ||||||||
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86
In-stock
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IXYS | MOSFET D2 Depletion Mode Power MOSFETs | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 16 A | 300 mOhms | - 2 V | 199 nC | Depletion | |||
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50
In-stock
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IXYS | MOSFET 0.2 Amps 500V 30 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 200 mA | 30 Ohms | Depletion | |||||
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161
In-stock
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IXYS | MOSFET 0.2 Amps 500V 30 Rds | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 200 mA | 30 Ohms | Depletion | |||||
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3
In-stock
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IXYS | MOSFET 20 Amps 500V 0.33 Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 20 A | 330 mOhms | - 3.5 V | 78.5 nC | Depletion | |||
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VIEW | IXYS | MOSFET 20 Amps 500V 0.33 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 20 A | 330 mOhms | Depletion | |||||
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VIEW | IXYS | MOSFET N-CH MOSFETS (D2) 500V 1.6A | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 1.6 A | 2.3 Ohms | 23.7 nC | Depletion |