- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Applied Filters :
16 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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601
In-stock
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STMicroelectronics | MOSFET N-Ch 650 V 0.024 Ohm 84 A MDmesh(TM) | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 84 A | 24 mOhms | 4 V | 240 nC | Enhancement | MDmesh | |||
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384
In-stock
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STMicroelectronics | MOSFET N-Ch 650 V 0.033 Ohm 69 A MDmesh(TM) | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 69 A | 24 mOhms | 4 V | 203 nC | Enhancement | MDmesh | |||
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1,498
In-stock
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STMicroelectronics | MOSFET N-Ch 600 V 0.168 Ohm 18 A MDmesh M2 | 25 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 18 A | 168 mOhms | 3 V | 29 nC | Enhancement | MDmesh | |||
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585
In-stock
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STMicroelectronics | MOSFET N-Ch 650 V 0.067 Ohm 35 A MDmesh(TM) | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 35 A | 67 mOhms | 4 V | 82 nC | Enhancement | MDmesh | |||
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1,433
In-stock
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STMicroelectronics | MOSFET N-Ch 650 V 0.09 Ohm 28 A MDmesh(TM) M5 | 25 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 28 A | 90 mOhms | 3 V | 62.5 nC | Enhancement | MDmesh | |||
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1,440
In-stock
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STMicroelectronics | MOSFET N-Ch 650 V 0.160 Ohm 18 A MDmesh(TM) M5 | 25 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 18 A | 160 mOhms | 3 V | 36 nC | Enhancement | MDmesh | |||
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GET PRICE |
8,700
In-stock
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STMicroelectronics | MOSFET N-Ch 650 V 0.056 Ohm 42 A Mdmesh | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 42 A | 56 mOhms | 4 V | 98 nC | Enhancement | MDmesh | ||
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913
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 4 A | 1.35 Ohms | 3 V | 9.8 nC | MDmesh | ||||
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1,000
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 5 A | 900 mOhms | 3 V | 10 nC | MDmesh | ||||
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799
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 5 A | 790 mOhms | 2 V | 10 nC | Enhancement | MDmesh | |||
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VIEW | STMicroelectronics | MOSFET N-CH 650V 0.037Ohm 58A | 25 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 710 V | 58 A | 37 mOhms | 4 V | 143 nC | MDmesh | ||||
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GET PRICE |
86,200
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 5 A | 1.15 Ohms | 3 V | 9 nC | MDmesh | |||
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865,200
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 4 A | 1.35 Ohms | 3 V | 9.8 nC | MDmesh | ||||
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VIEW | STMicroelectronics | MOSFET N-Ch 650 V 0.124 Ohm 22 A MDmesh(TM) M5 | 25 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 22 A | 124 mOhms | 4 V | 45 nC | Enhancement | MDmesh | |||
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VIEW | STMicroelectronics | MOSFET N-Ch 650 V 0.308 Ohm 11 A MDmesh(TM) M5 | 25 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 11 A | 308 mOhms | 4 V | 22 nC | Enhancement | MDmesh | |||
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585
In-stock
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STMicroelectronics | MOSFET N-Ch 600 V 0.27 Ohm 13 A MDmesh(TM) | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13 A | 260 mOhms | 3 V | 35 nC | Enhancement | MDmesh |
