- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- - 1.27 A (1)
- - 1.6 A (1)
- - 14 A (1)
- - 2.3 A (1)
- - 20 A (2)
- 10.3 A (2)
- 12.5 A (2)
- 14.1 A (2)
- 15 A (1)
- 16.7 A (1)
- 17.5 A (2)
- 18.1 A (1)
- 19 A (2)
- 19.3 A (1)
- 22.4 A (2)
- 25 A (1)
- 26 A (1)
- 26.7 A (1)
- 3.1 A (2)
- 3.5 A (1)
- 3.9 A (1)
- 31 A (2)
- 31.2 A (2)
- 34 A (1)
- 38 A (1)
- 39 A (3)
- 4 A (1)
- 4.3 A (2)
- 40 A (1)
- 41 A (4)
- 43 A (1)
- 43.3 A (2)
- 44 A (1)
- 45 A (2)
- 46 A (1)
- 47 A (1)
- 48 A (3)
- 5 A (1)
- 5.6 A (1)
- 57 A (1)
- 6 A (1)
- 60 A (1)
- 62 A (2)
- 63.3 A (2)
- 65 A (2)
- 68 A (1)
- 7 A (1)
- 7.6 A (2)
- 72 A (2)
- 8.5 A (2)
- 9 A (2)
- 9.1 A (1)
- Rds On - Drain-Source Resistance :
-
- 1 Ohms (2)
- 1.15 Ohms (1)
- 1.22 Ohms (1)
- 1.4 Ohms (1)
- 1.5 Ohms (2)
- 100 mOhms (1)
- 110 mOhms (3)
- 120 mOhms (3)
- 125 mOhms (1)
- 13 mOhms (1)
- 135 mOhms (2)
- 170 mOhms (3)
- 171 mOhms (2)
- 180 mOhms (1)
- 200 mOhms (1)
- 220 mOhms (1)
- 24 mOhms (1)
- 25 mOhms (3)
- 250 mOhms (2)
- 26 mOhms (2)
- 3 Ohms (1)
- 300 mOhms (2)
- 33 mOhms (2)
- 340 mOhms (2)
- 40 mOhms (1)
- 400 mOhms (2)
- 42 mOhms (1)
- 43 mOhms (2)
- 440 mOhms (1)
- 45 mOhms (1)
- 46 mOhms (3)
- 460 mOhms (1)
- 48 mOhms (1)
- 490 mOhms (2)
- 55 mOhms (1)
- 590 mOhms (2)
- 60 mOhms (1)
- 650 mOhms (1)
- 660 mOhms (1)
- 70 mOhms (2)
- 72 mOhms (2)
- 720 mOhms (2)
- 740 mOhms (1)
- 800 mOhms (1)
- 890 mOhms (1)
- 90 mOhms (6)
- 99 mOhms (2)
- Qg - Gate Charge :
-
- 10.5 nC (3)
- 115 nC (1)
- 118 nC (2)
- 12.4 nC (2)
- 13 nC (1)
- 15 nC (2)
- 15.3 nC (1)
- 16.4 nC (2)
- 161 nC (3)
- 17.2 nC (1)
- 180 nC (1)
- 188 nC (1)
- 20.5 nC (2)
- 23 nC (1)
- 24.8 nC (2)
- 250 nC (3)
- 270 nC (2)
- 28 nC (1)
- 31 nC (3)
- 32 nC (2)
- 32.6 nC (1)
- 4.7 nC (1)
- 43 nC (1)
- 6.8 nC (1)
- 63 nC (1)
- 68 nC (2)
- 70 nC (4)
- 72 nC (4)
- 73 nC (2)
- 80 nC (2)
- 85 nC (1)
- 86 nC (2)
- 9.4 nC (1)
- 91 nC (1)
- 99 nC (2)
79 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
479
In-stock
|
Infineon Technologies | MOSFET | 16 V | Through Hole | TO-251-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 700 V | 12.5 A | 300 mOhms | 2.5 V | 16.4 nC | Enhancement | CoolMOS | |||
|
|
455
In-stock
|
Infineon Technologies | MOSFET | 16 V | Through Hole | TO-251-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 700 V | 8.5 A | 490 mOhms | 2.5 V | 10.5 nC | Enhancement | CoolMOS | |||
|
|
4,945
In-stock
|
STMicroelectronics | MOSFET N-Ch 70V 5A OmniFET | SMD/SMT | TO-252-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 70 V | 5 A | 200 mOhms | ||||||||
|
|
GET PRICE |
182,100
In-stock
|
Infineon Technologies | MOSFET MOSFT 200V 65A 26mOhm 70nC Qg | 30 V | Through Hole | TO-220-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 65 A | 24 mOhms | 70 nC | Enhancement | ||||
|
|
GET PRICE |
7,650
In-stock
|
Infineon Technologies | MOSFET MOSFT 250V 60A 33mOhm 99nC Qg | 30 V | Through Hole | TO-220-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 60 A | 33 mOhms | 99 nC | Enhancement | ||||
|
|
3,400
In-stock
|
IR / Infineon | MOSFET 1 P-CH -55V HEXFET 105mOhms 31nC | 20 V | Through Hole | TO-220-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 14 A | 170 mOhms | - 1 V | 31 nC | Enhancement | ||||
|
|
327
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 63.3A TO247-3 | +/- 20 V | Through Hole | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 63.3 A | 43 mOhms | 3.5 V | 270 nC | Enhancement | CoolMOS | |||
|
|
5,085
In-stock
|
IR / Infineon | MOSFET PLANAR_MOSFETS | +/- 20 V | Through Hole | TO-251-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 20 A | 170 mOhms | - 1 V | 31 nC | Enhancement | ||||
|
|
1,152
In-stock
|
IR / Infineon | MOSFET MOSFT 250V 19A 46mOhm 73nC | 30 V | Through Hole | TO-220-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 19 A | 46 mOhms | 73 nC | Enhancement | |||||
|
|
232
In-stock
|
IXYS | MOSFET 40 Amps 600V | 20 V | Through Hole | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 38 A | 70 mOhms | 3.9 V | 250 nC | Enhancement | CoolMOS, ISOPLUS247 | |||
|
|
614
In-stock
|
Infineon Technologies | MOSFET 200V 1 N-CH HEXFET PWR MOSFET 26mOhms | 30 V | SMD/SMT | TO-252-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 62 A | 26 mOhms | 70 nC | Enhancement | |||||
|
|
316
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 31.2A TO247-3 | +/- 20 V | Through Hole | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 31.2 A | 99 mOhms | 3.5 V | 118 nC | Enhancement | CoolMOS | |||
|
|
5,290
In-stock
|
IR / Infineon | MOSFET MOSFT 250V 44A 46mOhm 72nC Qg | 30 V | Through Hole | TO-247-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 44 A | 46 mOhms | 72 nC | Enhancement | |||||
|
|
175
In-stock
|
Infineon Technologies | MOSFET AUTOMOTIVE | +/- 20 V | Through Hole | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 31 A | 90 mOhms | 2.5 V | 80 nC | Enhancement | CoolMOS | |||
|
|
2,200
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 31.2A TO247-3 | +/- 20 V | Through Hole | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 31.2 A | 99 mOhms | 3.5 V | 118 nC | Enhancement | CoolMOS | |||
|
|
3,222
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 4.3A IPAK-3 | 20 V | SMD/SMT | TO-251-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 4.3 A | 1 Ohms | 2.5 V | 15.3 nC | Enhancement | CoolMOS | |||
|
|
3,190
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 43.3A TO247-3 | +/- 20 V | Through Hole | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 43.3 A | 72 mOhms | 3.5 V | 161 nC | Enhancement | CoolMOS | |||
|
|
24,300
In-stock
|
Infineon Technologies | MOSFET MOSFT 250V 57A 33mOhm 99nC Qg | 30 V | Through Hole | TO-247-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 57 A | 33 mOhms | 99 nC | Enhancement | |||||
|
|
140
In-stock
|
Infineon Technologies | MOSFET MOSFT 200V 65A 25mOhm 70nC Qg | 30 V | Through Hole | TO-247-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 65 A | 25 mOhms | 70 nC | Enhancement | |||||
|
|
441
In-stock
|
Infineon Technologies | MOSFET MOSFT 200V 26A 22mOhm 73nC | 30 V | Through Hole | TO-220-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 26 A | 25 mOhms | 73 nC | Enhancement | |||||
|
|
GET PRICE |
31,000
In-stock
|
Infineon Technologies | MOSFET MOSFT 250V 46A 46mOhm 72nC Qg | 30 V | Through Hole | TO-220-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 46 A | 46 mOhms | 72 nC | Enhancement | ||||
|
|
11,300
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 43.3A TO247-3 | +/- 20 V | Through Hole | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 43.3 A | 72 mOhms | 3.5 V | 161 nC | Enhancement | CoolMOS | |||
|
|
505
In-stock
|
Infineon Technologies | MOSFET CONSUMER | 20 V | Through Hole | TO-220FP-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 10.3 A | 1.4 Ohms | 2.5 V | 20.5 nC | Enhancement | CoolMOS | |||
|
|
398
In-stock
|
Infineon Technologies | MOSFET CONSUMER | 20 V | Through Hole | TO-220FP-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 26.7 A | 440 mOhms | 2.5 V | 63 nC | Enhancement | CoolMOS | |||
|
|
GET PRICE |
17,260
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 9.1A TO220FP-3 | 20 V | Through Hole | TO-220FP-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 9.1 A | 460 mOhms | 2.5 V | 28 nC | Enhancement | CoolMOS | ||
|
|
443
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 5.6A TO220FP-3 | 20 V | Through Hole | TO-220FP-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 5.6 A | 800 mOhms | 2.5 V | 17.2 nC | Enhancement | CoolMOS | |||
|
|
813
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 10.3A TO220FP-3 | 20 V | Through Hole | TO-220FP-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 10.3 A | 400 mOhms | 3 V | 32 nC | CoolMOS | ||||
|
|
441
In-stock
|
Infineon Technologies | MOSFET CONSUMER | 20 V | Through Hole | TO-220FP-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 19.3 A | 660 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS | |||
|
|
24
In-stock
|
IXYS | MOSFET 25 Amps 800V | 20 V | SMD/SMT | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 25 A | 125 mOhms | 4 V | 180 nC | Enhancement | CoolMOS | |||
|
|
340
In-stock
|
Infineon Technologies | MOSFET CONSUMER | 20 V | Through Hole | TO-220FP-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 15 A | 890 mOhms | 2.5 V | 32 nC | Enhancement | CoolMOS |
