- Manufacture :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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231
In-stock
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IR / Infineon | MOSFET 100V 1 N-CH HEXFET 3.9mOhms 93nC | 16 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 190 A | 4.1 mOhms | 93 nC | |||||||
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152
In-stock
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Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 3.7mOhms 100nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 190 A | 3.7 mOhms | 100 nC | Enhancement | ||||
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VIEW | IR / Infineon | MOSFET 100V 190A 4 mOhm Automotive MOSFET | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 190 A | 3.3 mOhms | 2 V to 4 V | 150 nC | Enhancement | |||
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VIEW | Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 3.3mOhms 130nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 190 A | 3.3 mOhms | 130 nC | Enhancement |
