- Manufacture :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
2,935
In-stock
|
IR / Infineon | MOSFET MOSFT 40V 190A 3.7mOhm 100nC Qg | 20 V | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 40 V | 190 A | 2.7 mOhms | 100 nC | ||||||||
|
535
In-stock
|
IR / Infineon | MOSFET 100V 190A 4 mOhm Automotive MOSFET | SMD/SMT | TO-263-7 | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 190 A | 3.3 mOhms | 150 nC | ||||||||
|
800
In-stock
|
Infineon Technologies | MOSFET MOSFT 100V 190A 4.0mOhm 150nC Qg | 20 V | SMD/SMT | TO-263-7 | Reel | 1 Channel | Si | N-Channel | 100 V | 190 A | 3.3 mOhms | 150 nC | ||||||||
|
12,000
In-stock
|
Infineon Technologies | MOSFET 30V N-Channel HEXFET Power MOSFET | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 190 A | 2.7 mOhms | 35 nC | Directfet | |||||||
|
VIEW | Infineon Technologies | MOSFET MOSFT 100V 190A 3.9mOhm 93nC-7 | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 190 A | 3.2 mOhms | 93 nC | Enhancement | |||||
|
VIEW | IR / Infineon | MOSFET 100V 190A 4 mOhm Automotive MOSFET | SMD/SMT | TO-263-7 | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 190 A | 3.3 mOhms | 150 nC |