- Manufacture :
- Rds On - Drain-Source Resistance :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
3,097
In-stock
|
Fairchild Semiconductor | MOSFET UNIFET2 500V N-CH MOSFET DPAK | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 6.5 A | 850 mOhms | 14 nC | ||||||
|
2,111
In-stock
|
STMicroelectronics | MOSFET N-Ch 600V 0.63 6.5A MDmesh II Power MO | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 600 V | 6.5 A | 745 mOhms | ||||||||||
|
4,995
In-stock
|
STMicroelectronics | MOSFET N-Ch, 800V-0.95ohms Mdmesh 6.5A | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 6.5 A | 1.05 Ohms | 4 V | 18 nC | Enhancement | ||||
|
VIEW | onsemi | MOSFET NFET 60V HD+ | 14 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 70 V | 6.5 A | 210 mOhms | Enhancement |