- Manufacture :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,668
In-stock
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Fairchild Semiconductor | MOSFET 500V N-Channel UniFET-II | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 6.5 A | 1 Ohms | 3 V to 5 V | 14 nC | UniFET FRFET | ||||
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953
In-stock
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Fairchild Semiconductor | MOSFET 600V 6.5A N-Chan FRFET UniFET | 30 V | Through Hole | TO-220FP-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 6.5 A | 1.15 Ohms | 5 V | 20 nC | UniFET FRFET | ||||||
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492
In-stock
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Fairchild Semiconductor | MOSFET 600V NChannel MOSFET UniFET-II | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 6.5 A | 1.25 Ohms | 5 V | 17 nC | Enhancement | UniFET | ||||
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VIEW | Toshiba | MOSFET N-Ch MOS 6.5A 450V 35W 540pF 1.2 Ohm | Through Hole | TO-220FP-3 | 1 Channel | Si | N-Channel | 450 V | 6.5 A | 1.2 Ohms |
