- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
12 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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8,790
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 46A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 46 A | 8 mOhms | 2.1 V | 15 nC | Enhancement | ||||
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545
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 46A D2PAK-2 CoolMOS C7 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 46 A | 40 mOhms | 3 V | 93 nC | Enhancement | CoolMOS | |||
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707
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 46A D2PAK-2 CoolMOS C7 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 46 A | 40 mOhms | 3 V | 93 nC | Enhancement | CoolMOS | |||
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1,364
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Ch PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 46 A | 12 mOhms | Enhancement | PowerTrench | |||||
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10,000
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 19mOhms 33.3nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 46 A | 24 mOhms | 33.3 nC | Enhancement | |||||
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1,202
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 46A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 46 A | 8 mOhms | 2.1 V | 15 nC | Enhancement | OptiMOS | |||
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985
In-stock
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onsemi | MOSFET NFET 60V 34A 18MOHM | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 46 A | 16 mOhms | 2 V | 29 nC | |||||
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2,821
In-stock
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onsemi | MOSFET NFET SO8FL 30V 46A 6.96MO | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 46 A | 5.8 mOhms | 1.3 V | 18.6 nC | Enhancement | ||||
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2,995
In-stock
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Vishay Semiconductors | MOSFET 80V Vds 46A Id AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 46 A | 10.2 mOhms | 1.5 V | 35 nC | Enhancement | ||||
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GET PRICE |
30,000
In-stock
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Vishay Semiconductors | MOSFET 80V Vds 46A Id AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 46 A | 11.2 mOhms | 2.5 V | 35 nC | Enhancement | |||
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VIEW | Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 18mOhms 24nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 46 A | 18 mOhms | 24 nC | Enhancement | |||||
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493
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 19mOhms 33.3nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 46 A | 24 mOhms | 33.3 nC | Enhancement |
