Build a global manufacturer and supplier trusted trading platform.
Vgs - Gate-Source Voltage :
Minimum Operating Temperature :
Maximum Operating Temperature :
Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
Qg - Gate Charge :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IRFB4229PBF
GET PRICE
RFQ
31,000
In-stock
Infineon Technologies MOSFET MOSFT 250V 46A 46mOhm 72nC Qg 30 V Through Hole TO-220-3 - 40 C + 175 C Tube 1 Channel Si N-Channel 250 V 46 A 46 mOhms   72 nC Enhancement  
IRFZ46NPBF
1+
$1.190
10+
$1.010
100+
$0.774
500+
$0.684
RFQ
868
In-stock
Infineon Technologies MOSFET MOSFT 55V 46A 16.5mOhm 48nC 20 V Through Hole TO-220-3     Tube 1 Channel Si N-Channel 55 V 46 A 16.5 mOhms   48 nC    
IPP65R045C7
1+
$11.460
10+
$10.540
25+
$10.100
100+
$8.900
RFQ
491
In-stock
Infineon Technologies MOSFET N-Ch 650V 46A TO220-3 CoolMOS C7 20 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 650 V 46 A 40 mOhms 3 V 93 nC Enhancement CoolMOS
IPP65R045C7XKSA1
1+
$11.460
10+
$10.540
25+
$10.100
100+
$8.900
RFQ
500
In-stock
Infineon Technologies MOSFET N-Ch 650V 46A TO220-3 CoolMOS C7 20 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 650 V 46 A 40 mOhms 3 V 93 nC Enhancement CoolMOS
Page 1 / 1