- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
16 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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32,976
In-stock
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onsemi | MOSFET SOT-223 P-CH ENHANCE | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 2.5 A | 95 mOhms | Enhancement | ||||||
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GET PRICE |
11,566
In-stock
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onsemi | MOSFET PFET TSOP6 60V 2.5A 111MO | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 2.5 A | 72 mOhms | - 3 V | 18.1 nC | Enhancement | ||||
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4,464
In-stock
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onsemi | MOSFET PCH 1.8V DRIVE SERIES | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.5 A | 137 mOhms | |||||||||||
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1,564
In-stock
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Diodes Incorporated | MOSFET MOSFET P-CHAN. | +/- 8 V | SMD/SMT | X2-DFN2015-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.5 A | 36 mOhms | - 1 V | 9.1 nC | Enhancement | |||||
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2,968
In-stock
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Diodes Incorporated | MOSFET P-Ch -16V Enh FET 8Vgss -12A 0.65W | +/- 8 V | SMD/SMT | X2-DFN2015-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 16 V | - 2.5 A | 65 mOhms | - 1 V | 10 nC | Enhancement | |||||
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5,380
In-stock
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onsemi | MOSFET PCH 4V DRIVE SERIES | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 2.5 A | 156 mOhms | 4 V | 120 nC | Enhancement | |||||
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6,000
In-stock
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Texas instruments | MOSFET P-CH Pwr MOSFET 20V 90mohm | - 12 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.5 A | 105 mOhms | - 950 mV | 0.913 nC | NexFET | |||||
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5,634
In-stock
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Texas instruments | MOSFET 20V P-Ch FemtoFET MOSFET | - 12 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.5 A | 825 mOhms | - 1.2 V | 1090 pC | Enhancement | |||||
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2,225
In-stock
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Texas instruments | MOSFET 20V ,PCh FemtoFET MOSFET | - 12 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.5 A | 105 mOhms | - 950 mV | 0.913 nC | Enhancement | FemtoFET | ||||
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906
In-stock
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Texas instruments | MOSFET 20V P-Ch FemtoFET MOSFET | - 12 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.5 A | 825 mOhms | - 1.2 V | 1090 pC | Enhancement | FemtoFET | ||||
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14,982
In-stock
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Siliconix / Vishay | MOSFET P-Channel 30V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 2.5 A | 0.13 Ohms | - 2.5 V | 6.8 nC | Enhancement | TrenchFET | ||||
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5,647
In-stock
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onsemi | MOSFET PFET TSOP6 60V 2.5A 110mOhm | 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 2.5 A | 110 mOhms | Enhancement | |||||||
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6,000
In-stock
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Diodes Incorporated | MOSFET MOSFET P-CHAN. | +/- 8 V | SMD/SMT | X2-DFN2015-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 16 V | - 2.5 A | 31 mOhms | - 1 V | 10 nC | Enhancement | |||||
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5,000
In-stock
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onsemi | MOSFET PCH 1.8V DRIVE SERIES | SMD/SMT | SCH-6 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.5 A | 95 mOhms | |||||||||||
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VIEW | Toshiba | MOSFET Vds=-20V Id=-2.5A 6Pin | 10 V | SMD/SMT | UF6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.5 A | 49 mOhms | Enhancement | |||||||
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3,990
In-stock
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onsemi | MOSFET PCH 1.8V DRIVE SERIE | +/- 10 V | SMD/SMT | SOT-563-6 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.5 A | 215 mOhms | - 1.3 V | 4.6 nC | Enhancement |