- Vgs - Gate-Source Voltage :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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19,793
In-stock
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Fairchild Semiconductor | MOSFET SOT-23 P-CH LOGIC | 8 V | SMD/SMT | SSOT-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1 A | 350 mOhms | Enhancement | ||||||
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4,363
In-stock
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Fairchild Semiconductor | MOSFET -100V Single | 30 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 1 A | 1.05 Ohms | Enhancement | ||||||
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2,929
In-stock
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Fairchild Semiconductor | MOSFET Single PT5, PCH, 150/25V in MLP 2x2 | 25 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 150 V | - 1 A | 860 mOhms | - 3.2 V | 2.8 nC | PowerTrench | ||||
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3,587
In-stock
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Infineon Technologies | MOSFET P-Ch -100V 1A SOT-223-3 | +/- 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 1 A | 1 Ohms | - 2 V | 12.4 nC | Enhancement | ||||
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64,130
In-stock
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Nexperia | MOSFET 30V P-Channel Trench MOSFET | +/- 8 V | SMD/SMT | DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1 A | 430 mOhms | - 950 mV | 1.4 nC | Enhancement | ||||
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6,000
In-stock
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onsemi | MOSFET AUTOMOTIVE MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1 A | 148 mOhms | |||||||
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17,000
In-stock
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onsemi | MOSFET -20V -1A P-Channel | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1 A | 148 mOhms | Enhancement | ||||||
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6,000
In-stock
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onsemi | MOSFET 20V 1A P-Channel | 8 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1 A | 90 mOhms | Enhancement |
