- Manufacture :
- Vgs - Gate-Source Voltage :
- Packaging :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Qualification | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Tradename | Package | Factory Pack Quantity | RoHS | |
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GET PRICE |
45,000
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60V | - 20 V, + 20 V | Tape & Reel (TR) | AEC-Q101 | 1 Channel | 1.8 W | P-Channel | 60 V | 7.3 A | 105 mOhms | 3 V | 17.2 nC | TSOT-26-6 | 3000 | Green available | ||||||||
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8,600
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 7.3A DPAK-2 | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 7.3 A | 600 mOhms | 3 V | 23 nC | CoolMOS |
