- Manufacture :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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41,780
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 20.2A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 7.3 A | 540 mOhms | 2.5 V | 20.5 nC | Enhancement | CoolMOS | |||
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1,040
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 620mohm / 600V, FRFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 7.3 A | 620 mOhms | 3 V to 5 V | 20 nC | SuperFET II FRFET | ||||
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8,600
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 7.3A DPAK-2 | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 7.3 A | 600 mOhms | 3 V | 23 nC | CoolMOS | ||||
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35,580
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 7.3A DPAK-2 CoolMOS E6 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 7.3 A | 540 mOhms | CoolMOS | ||||||
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2,714
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 7.3A DPAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 7.3 A | 540 mOhms | 2.5 V | 23 nC | Enhancement | CoolMOS | |||
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47
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 7.3A DPAK-2 CoolMOS E6 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 7.3 A | 540 mOhms | CoolMOS |
