- Vgs - Gate-Source Voltage :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,441
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -14.9A DSO-8 OptiMOS P | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 14.9 A | 8 mOhms | - 102 nC | Enhancement | OptiMOS | ||||
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2,651
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -14.9A DSO-8 OptiMOS P | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 14.9 A | 8 mOhms | - 102 nC | Enhancement | OptiMOS | ||||
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1,904
In-stock
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Infineon Technologies | MOSFET P-Ch -20V -14.9A DSO-8 OptiMOS P | +/- 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 14.9 A | 6.7 mOhms | - 1.2 V | - 88 nC | Enhancement | OptiMOS | |||
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2,500
In-stock
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Infineon Technologies | MOSFET P-Ch -20V -14.9A DSO-8 OptiMOS P | +/- 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 14.9 A | 6.7 mOhms | - 1.2 V | - 88 nC | Enhancement |
