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- Qg - Gate Charge :
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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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636
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Channel a-FET Logic Level | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 9.8 A | 180 mOhms | Enhancement | ||||||
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2,569
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 SO-8,2.5K | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 9.8 A | 9 mOhms | 43 nC | Enhancement | DIOFET | ||||
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2,231
In-stock
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Diodes Incorporated | MOSFET N-Ch FET VDSS 20V VGSS 20V ID 9.8A | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 9.8 A | 20 mOhms | 11.6 nC | Enhancement | |||||
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3,903
In-stock
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Diodes Incorporated | MOSFET DIOFET MOSFETN-CHAN ENH MDE SCHOT DIO... | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 9.8 A | 9 mOhms | 1 V | 43 nC | Enhancement |
