- Manufacture :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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8,340
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 30A 75mOhm 82nCAC | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 30 A | 75 mOhms | 82 nC | Enhancement | |||||
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766
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 30A 75mOhm 82nCAC | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 30 A | 75 mOhms | 4 V | 82 nC | Enhancement | ||||
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20
In-stock
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IXYS | MOSFET 30.0 Amps 600 V 0.24 Ohm Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 240 mOhms | 5 V | 82 nC | Enhancement | PolarHV | |||
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VIEW | IXYS | MOSFET 30.0 Amps 600 V 0.24 Ohm Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 240 mOhms | 5 V | 82 nC | Enhancement | PolarHV |
