- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
-
- 0.012 Ohms (1)
- 0.016 Ohms (1)
- 10 mOhms (1)
- 10.6 mOhms (1)
- 11.3 mOhms (1)
- 13.5 mOhms (1)
- 13.6 mOhms (1)
- 14.5 mOhms (2)
- 15 mOhms (1)
- 15.9 mOhms (3)
- 17.4 mOhms (2)
- 18 mOhms (3)
- 20 mOhms (1)
- 22 mOhms (1)
- 23 mOhms (1)
- 24.5 mOhms (3)
- 25.8 mOhms (2)
- 27 mOhms (2)
- 28 mOhms (1)
- 30 mOhms (1)
- 6.7 mOhms (1)
- 60 mOhms (2)
- 7.8 mOhms (1)
- 9 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
35 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
15,988
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 30 A | 25.8 mOhms | 1.2 V | 31 nC | Enhancement | OptiMOS | ||
|
|
4,853
In-stock
|
Fairchild Semiconductor | MOSFET 60V N-Ch PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 30 A | 23 mOhms | Enhancement | PowerTrench | |||||
|
|
4,783
In-stock
|
Infineon Technologies | MOSFET N-Ch 75V 30A DPAK-2 OptiMOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 30 A | 15.9 mOhms | 1.2 V | 72 nC | Enhancement | OptiMOS | |||
|
|
10,835
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 30A DPAK-2 OptiMOS-T2 | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 30 A | 9 mOhms | Enhancement | OptiMOS | |||||
|
|
2,416
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 40 V | 30 A | 30 mOhms | ||||||||||
|
|
3,239
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Ch PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 30 A | 15 mOhms | Enhancement | PowerTrench | |||||
|
|
1,873
In-stock
|
STMicroelectronics | MOSFET N-Ch 30 Volt 30 Amp | 20 V | SMD/SMT | TO-252-3 | - 65 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 30 A | 20 mOhms | Enhancement | ||||||
|
|
2,790
In-stock
|
Infineon Technologies | MOSFET MOSFT 55V 30A 35mOhm 16.7nC LogLvl | 16 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 55 V | 30 A | 60 mOhms | 16.7 nC | ||||||||
|
|
1,388
In-stock
|
IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 24.5mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 30 A | 24.5 mOhms | 18 nC | Enhancement | ||||||
|
|
2,838
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 30A DPAK-2 OptiMOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 30 A | 10 mOhms | Enhancement | OptiMOS | |||||
|
|
1,685
In-stock
|
Infineon Technologies | MOSFET N-Ch 75V 30A DPAK-2 OptiMOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 30 A | 15.9 mOhms | 1.2 V | 72 nC | Enhancement | ||||
|
|
18,400
In-stock
|
Siliconix / Vishay | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 30 A | 0.012 Ohms | 1.5 V | 40 nC | Enhancement | ||||
|
|
26,190
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 30A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 30 A | 22 mOhms | Enhancement | OptiMOS | |||||
|
|
1,262
In-stock
|
Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 24.5mOhms 18nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 30 A | 24.5 mOhms | 18 nC | Enhancement | |||||
|
|
2,440
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 30A DPAK-2 OptiMOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 30 A | 14.5 mOhms | 1.2 V | 19 nC | Enhancement | OptiMOS | |||
|
|
2,534
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 30A DPAK-2 | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 30 A | 13.5 mOhms | OptiMOS | ||||||||||
|
|
1,030
In-stock
|
Infineon Technologies | MOSFET N-CHANNEL_55/60V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 30 A | 11.3 mOhms | 3 V | 41 nC | Enhancement | ||||
|
|
76,000
In-stock
|
Infineon Technologies | MOSFET MOSFT 55V 30A 24.5mOhm 18nC Qg | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 30 A | 24.5 mOhms | 4 V | 27 nC | |||||||
|
|
807
In-stock
|
Infineon Technologies | MOSFET N-Ch 75V 30A DPAK-2 OptiMOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 30 A | 17.4 mOhms | 2.1 V | 57 nC | Enhancement | OptiMOS | |||
|
|
2,500
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 30A DPAK-2 OptiMOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 30 A | 14.5 mOhms | 1.2 V | 19 nC | Enhancement | ||||
|
|
3,375
In-stock
|
Infineon Technologies | MOSFET 80V 1 N-CH HEXFET PWR MOSFET 28mOhms | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 30 A | 28 mOhms | 2.5 V | 22 nC | Enhancement | ||||
|
|
12,500
In-stock
|
Infineon Technologies | MOSFET N-CHANNEL_55/60V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 30 A | 10.6 mOhms | 1.2 V | 69 nC | Enhancement | ||||
|
|
5,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 30 A | 25.8 mOhms | 1.2 V | 31 nC | Enhancement | ||||
|
|
4,973
In-stock
|
Infineon Technologies | MOSFET N-CHANNEL_55/60V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 30 A | 15.9 mOhms | 1.6 V | 33 nC | Enhancement | ||||
|
|
4,626
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 30A DPAK-2 OptiMOS-T2 | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 30 A | 13.6 mOhms | Enhancement | OptiMOS | |||||
|
|
2,000
In-stock
|
Siliconix / Vishay | MOSFET N-Channel 55V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 30 A | 0.016 Ohms | 1.5 V | 18 nC | Enhancement | TrenchFET | |||
|
|
2,500
In-stock
|
Infineon Technologies | MOSFET N-CHANNEL_55/60V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 30 A | 27 mOhms | 1.2 V | 24 nC | Enhancement | ||||
|
|
2,000
In-stock
|
Toshiba | MOSFET N-Ch MOS 30A 60V 30W 1350pF 0.018 | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 30 A | 18 mOhms | ||||||||||
|
|
VIEW | Infineon Technologies | MOSFET N-Ch 75V 30A DPAK-2 OptiMOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 30 A | 17.4 mOhms | 2.1 V | 57 nC | Enhancement | ||||
|
|
2,180
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 30A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 30 A | 7.8 mOhms | 1.2 V | 41.8 nC | Enhancement | OptiMOS |
