- Manufacture :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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26,650
In-stock
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Fairchild Semiconductor | MOSFET 150V 4.5a .6 Ohms/VGS=1V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 4.5 A | 57 mOhms | Enhancement | PowerTrench | |||||
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2,078
In-stock
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Fairchild Semiconductor | MOSFET 150V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 4.5 A | 55 mOhms | 3.4 V | 10.6 nC | PowerTrench | ||||
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6,795
In-stock
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IR / Infineon | MOSFET MOSFT 100V 4.5A 60mOhm 33nC | 30 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 100 V | 4.5 A | 60 mOhms | 33 nC | ||||||||
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3,066
In-stock
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IR / Infineon | MOSFET 100V 1 N-CH HEXFET 60mOhms 33nC | 30 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 4.5 A | 60 mOhms | 5.5 V | 33 nC | Enhancement | ||||
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1,737
In-stock
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Fairchild Semiconductor | MOSFET 100V 4.5a .3 Ohms/VGS=1V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 4.5 A | 50 mOhms | Enhancement | UltraFET |
