- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,984
In-stock
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Fairchild Semiconductor | MOSFET 400V N-Channel QFET | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 3.4 A | 1.6 Ohms | Enhancement | ||||||
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3,081
In-stock
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Fairchild Semiconductor | MOSFET N-Channel MOSFET 600V, 3.8A, 2.5Ohm | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 3.4 A | 90 mOhms | 3.7 nC, 6.4 nC | PowerTrench | |||||
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12,803
In-stock
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Infineon Technologies | MOSFET MOSFT 3.4A 63mOhm 30V 2.5V drv capable | 12 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 3.4 A | 63 mOhms | 2.9 nC | ||||||||
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3,610
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 3.4 A | 83 mOhms | 4 V | 3 nC | PowerTrench | ||||
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27
In-stock
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Diodes Incorporated | MOSFET 20V N-Ch Enh Mode 12Vgs 292pF 3.8nC | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.4 A | 72 mOhms | 400 mV | 3.8 nC | Enhancement | ||||
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236,500
In-stock
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Nexperia | MOSFET PMV65UNE/TO-236AB/REEL 7 | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.4 A | 63 mOhms | 450 mV | 6 nC | Enhancement |
